K4A8G085WB-BIWE vs K4A8G085WB-BICH Comparison
Detailed side-by-side comparison of K4A8G085WB-BIWE by Samsung Electronics and K4A8G085WB-BICH by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G085WB-BIWE | K4A8G085WB-BICH |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gb | — |
| Memory Organization | 1G x 8 | — |
| Data Rate | 3200 Mbps | 2400 Mbps (DDR4-2400) |
| Supply Voltage | 1.2 V | 1.2V |
| Operating Temperature | 0°C to +85°C | 0°C to 85°C |
| Package | 78-FBGA | 78-ball FBGA |
| Mounting Type | Surface Mount | — |
| Memory Interface | Parallel | — |
| Access Time | [DATA_NEEDED: tRCD, tRP, tRAS] | — |
| CAS Latency | [DATA_NEEDED: CL value] | Programmable |
| Refresh | Auto-refresh, self-refresh | — |
| RoHS Status | Compliant | — |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | — |
| Density | — | 8Gb |
| Organization | — | 1G x 8 |
| Max Supply Current | — | 170mA |
| Burst Length | — | BL8, BL16 |
| On-Die ECC | — | Yes |
| Data Bus Inversion | — | Yes |
| RoHS | — | Compliant |
| Die Revision | — | B-die |