K4A8G165WB-BCWE vs K4A8G165WB-BCRC Comparison
Detailed side-by-side comparison of K4A8G165WB-BCWE by Samsung Electronics and K4A8G165WB-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCWE
K4A8G165WB-BCWE - 8Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A8G165WB-BCWE β ActiveSamsung Electronics
K4A8G165WB-BCRC - 8Gb DDR4 SDRAM x16 2400Mbps | Samsung
K4A8G165WB-BCRC β ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCWE | K4A8G165WB-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.55 | $12.57 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (DRAM, volatile) |
| Density | 8 Gb | β |
| Organization | 512M x 16 | β |
| Data Rate | 3200 Mbps | 2400 Mbps (PC4-19200) |
| Supply Voltage | 1.2 V | 1.2 V (1.14 V to 1.26 V) |
| Access Time (CAS Latency) | 19 ns | β |
| Interface | Parallel | DDR4 (Double Data Rate, synchronous) |
| Package | 96FBGA | 96-ball FBGA (PBGA96) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | 0C to +85C | -40C to +95C |
| Burst Length | 8 | β |
| Bank Group Architecture | Yes | β |
| On-Die Termination (ODT) | Yes, dynamic ODT with ZQ calibration | β |
| Functions | Auto precharge, asynchronous reset, CRC, data mask | β |
| RoHS Status | Compliant | Compliant |
| Lead Free | Yes | β |
| Memory Size | β | 8 Gb (1 GB) |
| Memory Organization | β | 512M x 16 |
| Technology | β | CMOS DRAM, Samsung 8Gb B-die |
| Ball Pitch | β | 0.8 mm |
| On-Die Termination | β | Yes (ODT with dynamic ODT) |
| ZQ Calibration | β | Yes |
| CRC / CA Parity | β | Yes (CRC function) |
| Auto Precharge | β | Yes |
| Asynchronous Reset | β | Yes |
| Refresh | β | Auto-refresh and self-refresh |