K4A8G165WB-BCWE vs K4A8G165WB-BCRC Comparison
Detailed side-by-side comparison of K4A8G165WB-BCWE by Samsung Electronics and K4A8G165WB-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE ✓ ActiveSamsung Electronics
K4A8G165WB-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WB-BCRC ✓ ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCWE | K4A8G165WB-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | — |
| Unit Price (USD) | $6.25 | — |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM (DRAM, volatile) |
| Memory Size | 8 Gb | 8 Gb |
| Memory Organization | 512M x 16 | 512M x 16 |
| Data Rate | 3200 Mbps/pin | 2400 Mbps/pin (DDR4-2400) |
| Supply Voltage | 1.2 V | — |
| Access Time | 19 ns | — |
| Interface | Parallel | Parallel (DDR4 SDRAM bus) |
| Package | 96FBGA | 96-ball FBGA (PBGA96) |
| Operating Temperature | 0C to +85C | -40C to +95C |
| Mounting Type | Surface Mount | Surface Mount |
| Memory Format | DRAM (volatile) | — |
| Technology | DDR4 SDRAM B-die | CMOS, B-die 8Gb die |
| Prefetch | 8n | — |
| Refresh | Self-refresh supported | — |
| Termination | On-die termination (ODT) | — |
| RoHS Status | [DATA_NEEDED: RoHS compliance statement] | — |
| MSL Level | [DATA_NEEDED: moisture sensitivity level] | — |
| Supply Voltage (VDD) | — | 1.2 V |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC / CA Parity | — | CRC function supported |
| On-Chip Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Clock Frequency | — | 1200 MHz (DDR4-2400) |