K4A8G165WB-BCWE vs K4A8G165WB-BCRC Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng K4A8G165WB-BCWE sa pamamagitan ng Samsung Electronics at K4A8G165WB-BCRC sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Samsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE ✓ NakahandaSamsung Electronics
K4A8G165WB-BCRC - 8Gb DDR4 SDRAM 2400Mbps x16 | Samsung
K4A8G165WB-BCRC ✓ NakahandaPagsanggunian na paghahambing
| Parametro | K4A8G165WB-BCWE | K4A8G165WB-BCRC |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | In Stock | — |
| Presyo ng Yunit (USD) | $6.25 | — |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM (DRAM, volatile) |
| Laki ng Memory | 8 Gb | 8 Gb |
| Memory Organization | 512M x 16 | 512M x 16 |
| Rate ng Data | 3200 Mbps/pin | 2400 Mbps/pin (DDR4-2400) |
| Volte ng Pagbibigay | 1.2 V | — |
| Access Time | 19 ns | — |
| Interface | Parallel | Parallel (DDR4 SDRAM bus) |
| Packhaging | 96FBGA | 96-ball FBGA (PBGA96) |
| Temperature na Operasyon | 0C to +85C | -40C to +95C |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Memory Format | DRAM (volatile) | — |
| Technology | DDR4 SDRAM B-die | CMOS, B-die 8Gb die |
| Prefetch | 8n | — |
| Refresh | Self-refresh supported | — |
| Termination | On-die termination (ODT) | — |
| Tindminan RoHS | [DATA_NEEDED: RoHS compliance statement] | — |
| Level ng MSL | [DATA_NEEDED: moisture sensitivity level] | — |
| Supply Voltage (VDD) | — | 1.2 V |
| Auto Precharge | — | Yes |
| Asynchronous Reset | — | Yes |
| CRC / CA Parity | — | CRC function supported |
| On-Chip Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Clock Frequency | — | 1200 MHz (DDR4-2400) |