K4A8G165WB-BCWE vs MT40A512M16LY-075:E Comparison
Detailed side-by-side comparison of K4A8G165WB-BCWE by Samsung Electronics and MT40A512M16LY-075:E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A8G165WB-BCWE ✓ ActiveMicron Technology
MT40A512M16LY-075:E - 8Gb DDR4 SDRAM 2666MT/s | Micron
MT40A512M16LY-075:E ✓ ActiveSpecification Comparison
| Parameter | K4A8G165WB-BCWE | MT40A512M16LY-075:E |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.55 | $5.80 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organization | 512M x 16 | — |
| Data Rate | 3200 Mbps | 2666 MT/s |
| Supply Voltage | 1.2 V | — |
| Access Time (CAS Latency) | 19 ns | — |
| Interface | Parallel | Parallel |
| Package | 96FBGA | 96-FBGA (7.5x13.5mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | 0C to +85C | — |
| Burst Length | 8 | — |
| Bank Group Architecture | Yes | — |
| On-Die Termination (ODT) | Yes, dynamic ODT with ZQ calibration | — |
| Functions | Auto precharge, asynchronous reset, CRC, data mask | — |
| RoHS Status | Compliant | — |
| Lead Free | Yes | — |
| Memory Size | — | 8 Gbit (512M x 16) |
| Clock Frequency | — | 1.33 GHz |
| CAS Latency | — | 19 |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Supply | — | 2.5V (-125mV, +250mV) |
| Operating Temperature Range | — | 0°C to +95°C |
| Refresh Time | — | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| Internal Banks (x16) | — | 8 banks (4 groups of 2) |
| I/O Type | — | 1.2V pseudo open-drain |
| RoHS | — | Compliant |