K4A8G165WB-BCWE vs MT40A512M16LY-075:E 对比
详细并排对比 K4A8G165WB-BCWE 出自 Samsung Electronics 和 MT40A512M16LY-075:E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A8G165WB-BCWE | MT40A512M16LY-075:E |
|---|---|---|
| 品牌 | Samsung Electronics | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $6.55 | $5.80 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| 存储组织 | 512M x 16 | — |
| 数据速率 | 3200 Mbps | 2666 MT/s |
| 电源电压 | 1.2 V | — |
| Access Time (CAS Latency) | 19 ns | — |
| 接口 | Parallel | Parallel |
| 封装 | 96FBGA | 96-FBGA (7.5x13.5mm) |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度 | 0C to +85C | — |
| Burst Length | 8 | — |
| Bank Group Architecture | Yes | — |
| On-Die Termination (ODT) | Yes, dynamic ODT with ZQ calibration | — |
| Functions | Auto precharge, asynchronous reset, CRC, data mask | — |
| RoHS 状态 | Compliant | — |
| Lead Free | Yes | — |
| 存储容量 | — | 8 Gbit (512M x 16) |
| Clock Frequency | — | 1.33 GHz |
| CAS 延迟 | — | 19 |
| Supply Voltage (VDD/VDDQ) | — | 1.2V ±60mV |
| VPP Supply | — | 2.5V (-125mV, +250mV) |
| 工作温度范围 | — | 0°C to +95°C |
| Refresh Time | — | 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C to 105°C |
| Internal Banks (x16) | — | 8 banks (4 groups of 2) |
| I/O Type | — | 1.2V pseudo open-drain |
| RoHS | — | Compliant |