K4A8G165WC-BCRC vs H5AN8G8NCJR-PBC Comparison
Detailed side-by-side comparison of K4A8G165WC-BCRC by Samsung Electronics and H5AN8G8NCJR-PBC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4A8G165WC-BCRC | H5AN8G8NCJR-PBC |
|---|---|---|
| Brand | Samsung Electronics | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $23.00 | $2.40 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organization | 512M x 16 | 1G x 8 (x8) |
| Data Rate | 2400 Mbps | [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) | 1.2 V |
| VPP Voltage | 2.5 V | — |
| Operating Temperature | 0°C to +95°C (case) | [DATA_NEEDED: operating temperature range] |
| Package | 96-ball FBGA (9mm x 13mm) | 78-ball FBGA |
| Interface | 16-bit I/O | — |
| Banks | 16 (4 bank groups) | — |
| Burst Length | 8 (BL8) | BL8 |
| CAS Latency | Programmable (e.g., 16, 17, 18) | — |
| Refresh | Temperature-compensated self-refresh (TCSR) | Auto-refresh and self-refresh |
| RoHS | Compliant | — |
| Mounting Type | Surface Mount | Surface Mount |
| Memory Size | — | 8 Gb (1 GB) |
| Interface Voltage (VDDQ) | — | 1.2 V (SSTL12) |
| Architecture | — | CMOS, fully synchronous, dual-edge clocked |
| Bank Structure | — | 8 internal banks, bank-group architecture |
| Features | — | ODT, DM, DQS strobes, programmable CAS latency, self-refresh |
| Die Revision Family | — | CJR (H5AN8G8NCJR-xxC) |
| RoHS Status | — | Lead-Free & Halogen-Free |
| Typical Applications | — | PC/server main memory, embedded solder-down memory |