K4A8G165WC-BCRC vs H5AN8G8NCJR-PBC 对比
详细并排对比 K4A8G165WC-BCRC 出自 Samsung Electronics 和 H5AN8G8NCJR-PBC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4A8G165WC-BCRC | H5AN8G8NCJR-PBC |
|---|---|---|
| 品牌 | Samsung Electronics | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $23.00 | $2.40 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| 存储组织 | 512M x 16 | 1G x 8 (x8) |
| 数据速率 | 2400 Mbps | [DATA_NEEDED: data rate for -PBC speed grade (Mbps/MT/s)] |
| Supply Voltage (VDD) | 1.2 V (1.14V to 1.26V) | 1.2 V |
| VPP Voltage | 2.5 V | — |
| 工作温度 | 0°C to +95°C (case) | [DATA_NEEDED: operating temperature range] |
| 封装 | 96-ball FBGA (9mm x 13mm) | 78-ball FBGA |
| 接口 | 16-bit I/O | — |
| Banks | 16 (4 bank groups) | — |
| Burst Length | 8 (BL8) | BL8 |
| CAS 延迟 | Programmable (e.g., 16, 17, 18) | — |
| Refresh | Temperature-compensated self-refresh (TCSR) | Auto-refresh and self-refresh |
| RoHS | Compliant | — |
| 安装类型 | Surface Mount | Surface Mount |
| 存储容量 | — | 8 Gb (1 GB) |
| Interface Voltage (VDDQ) | — | 1.2 V (SSTL12) |
| Architecture | — | CMOS, fully synchronous, dual-edge clocked |
| Bank Structure | — | 8 internal banks, bank-group architecture |
| 特性 | — | ODT, DM, DQS strobes, programmable CAS latency, self-refresh |
| Die Revision Family | — | CJR (H5AN8G8NCJR-xxC) |
| RoHS 状态 | — | Lead-Free & Halogen-Free |
| Typical Applications | — | PC/server main memory, embedded solder-down memory |