K4B4G1646D-BCK0 vs MT41K256M16HA-125 Comparison
Detailed side-by-side comparison of K4B4G1646D-BCK0 by Samsung Electronics and MT41K256M16HA-125 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4B4G1646D-BCK0 | MT41K256M16HA-125 |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | — | $6.36 |
| Memory Type | DDR3L SDRAM | SDRAM - DDR3L |
| Density | 4 Gb | — |
| Organization | 256M x 16 | — |
| Number of Banks | 8 | — |
| Data Rate | 1600 Mbps per pin | — |
| Clock Frequency | 800 MHz | 800 MHz |
| Supply Voltage (VDD) | 1.35V (1.283V to 1.45V) | — |
| Supply Voltage (VDDQ) | 1.35V (1.283V to 1.45V) | — |
| CAS Latency | 11 (programmable) | 11 |
| Burst Length | 8, 4 | — |
| Package | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96-FBGA (9x14 mm) |
| Operating Temperature | 0°C to 95°C (Tc) | [DATA_NEEDED: operating temperature range] |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | — |
| Memory Size | — | 4Gbit (256M x 16) |
| Data Bus Width | — | 16 bit |
| Access Time | — | 13.75 ns |
| Supply Voltage | — | 1.35 V |
| Number of Pins | — | 96 |
| Mounting Type | — | Surface Mount |
| RoHS Status | — | Compliant |
| Logic Family | — | CMOS |
| Refresh Interval | — | 7.8 us at 85C |