K4B4G1646D-BCK0 vs MT41K256M16HA-125 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646D-BCK0 disebabkan oleh Samsung Electronics dan MT41K256M16HA-125 disebabkan oleh Micron Technology. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | K4B4G1646D-BCK0 | MT41K256M16HA-125 |
|---|---|---|
| Merek | Samsung Electronics | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Harga Unit (USD) | — | $6.36 |
| Jenis Ingatan | DDR3L SDRAM | SDRAM - DDR3L |
| Density | 4 Gb | — |
| Organisasi | 256M x 16 | — |
| Number of Banks | 8 | — |
| Kadar Data | 1600 Mbps per pin | — |
| Clock Frequency | 800 MHz | 800 MHz |
| Supply Voltage (VDD) | 1.35V (1.283V to 1.45V) | — |
| Supply Voltage (VDDQ) | 1.35V (1.283V to 1.45V) | — |
| Latensi CAS | 11 (programmable) | 11 |
| Burst Length | 8, 4 | — |
| Kemasan | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) | 96-FBGA (9x14 mm) |
| Suhu Operasi | 0°C to 95°C (Tc) | [DATA_NEEDED: operating temperature range] |
| RoHS | Compliant | — |
| Lead-Free | Yes | Yes |
| Boson Bebas | Yes | — |
| Saiz Ingatan | — | 4Gbit (256M x 16) |
| Lebar Bus Data | — | 16 bit |
| Access Time | — | 13.75 ns |
| Tegangan Pemberi Arus | — | 1.35 V |
| Bilangan Pin | — | 96 |
| Jenis Pemasangan | — | Surface Mount |
| Status RoHS | — | Compliant |
| Logic Family | — | CMOS |
| Refresh Interval | — | 7.8 us at 85C |