K4B4G1646D-BHMA vs MT41K256M16HA-125 Comparison

Detailed side-by-side comparison of K4B4G1646D-BHMA by Samsung Electronics and MT41K256M16HA-125 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4B4G1646D-BHMA K4B4G1646D-BHMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung

K4B4G1646D-BHMA - 4Gb DDR3L SDRAM 256Mx16 | Samsung

K4B4G1646D-BHMA ✓ Active
Micron Technology
MT41K256M16HA-125 MT41K256M16HA-125 - 4Gbit DDR3L SDRAM 800MHz | Micron

MT41K256M16HA-125 - 4Gbit DDR3L SDRAM 800MHz | Micron

MT41K256M16HA-125 ✓ Active

Specification Comparison

Parameter K4B4G1646D-BHMA MT41K256M16HA-125
Brand Samsung Electronics Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Unit Price (USD) — $6.36
Memory Type DDR3L SDRAM SDRAM - DDR3L
Density 4 Gb —
Organization 256M x 16 —
Data Rate 1866 Mbps —
Supply Voltage 1.35 V (1.283 V to 1.45 V) 1.35 V
Package 96-ball FBGA 96-FBGA (9x14 mm)
Operating Temperature -40°C to +95°C (TC) [DATA_NEEDED: operating temperature range]
CAS Latency 13 (at 1866 Mbps) 11
Burst Length 8 and 4 —
Number of Terminals 96 —
Lead-Free Yes Yes
Halogen Free Yes —
RoHS Compliant Yes —
Die Version D-die —
Refresh Mode Auto and Self Refresh —
Memory Size — 4Gbit (256M x 16)
Data Bus Width — 16 bit
Clock Frequency — 800 MHz
Access Time — 13.75 ns
Number of Pins — 96
Mounting Type — Surface Mount
RoHS Status — Compliant
Logic Family — CMOS
Refresh Interval — 7.8 us at 85C

Datasheets & Resources

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