K4B4G1646D-BYMA0 vs K4B4G1646D-BYK0 Comparison
Detailed side-by-side comparison of K4B4G1646D-BYMA0 by Samsung Electronics and K4B4G1646D-BYK0 by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646D-BYMA0 - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646D-BYMA0 ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646D-BYMA0 | K4B4G1646D-BYK0 |
|---|---|---|
| Brand | Samsung Electronics | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Organization | 256M x 16 | 256M x 16 |
| Total Memory Size | 4 Gb | — |
| Supply Voltage | 1.35 V | 1.35 V (1.5 V compatible) |
| Data Rate | 1866 Mbps (PC3-14900) | 1600 Mbps (PC3-12800) |
| Package | 96-ball FBGA | 96-ball FBGA |
| Operating Temperature Range | 0°C to +85°C | — |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | Yes |
| RoHS Compliant | Yes | Yes |
| Auto Precharge | Supported | — |
| Asynchronous Reset | Supported | — |
| ZQ Calibration | Supported | — |
| Data Mask | Supported | — |
| Dynamic On-Chip Termination | Supported | — |
| Density | — | 4 Gbit |
| Operating Temperature | — | 0°C to 85°C |
| CAS Latency | — | Programmable (e.g., 11, 10, 9) |
| Burst Length | — | 8 (with burst chop 4) |
| On-Die Termination | — | Yes |
| Number of Pins | — | 96 |
| Die Revision | — | D-die |