K4B4G1646E-BMK0 vs IS43TR16256AL-125KBL Comparison
Detailed side-by-side comparison of K4B4G1646E-BMK0 by Samsung Electronics and IS43TR16256AL-125KBL by ISSI, Integrated Silicon Solution Inc. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-125KBL ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646E-BMK0 | IS43TR16256AL-125KBL |
|---|---|---|
| Brand | Samsung Electronics | ISSI, Integrated Silicon Solution Inc |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Density | 4 Gb | — |
| Organization | 256M x 16 | — |
| Speed Grade | 1600 Mbps | — |
| Voltage | 1.35 V | — |
| Operating Temperature | -40°C to +95°C | 0°C ~ 95°C |
| Package | 96-FBGA | 96-TWBGA (9x13mm) |
| Interface | Parallel | Parallel |
| Clock Frequency | 800 MHz | 800 MHz |
| Data Rate | 1600 Mbps | 1600 Mbps |
| Memory Type | DDR3L SDRAM | SDRAM - DDR3L |
| Mounting Type | Surface Mount | Surface Mount |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic ODT | Yes | — |
| Data Mask | Yes | — |
| Memory Size | — | 4Gbit (256M x 16) |
| Access Time | — | 20 ns |
| Supply Voltage | — | 1.35V (backward compatible to 1.5V) |
| Memory Format | — | DRAM |
| Technology | — | SDRAM - DDR3L |
| RoHS Status | — | Compliant |
| Lead-Free | — | Yes |
| Number of Terminals | — | 96 |