K4B4G1646E-BMK0 vs IS43TR16256AL-125KBL Comparison

Detailed side-by-side comparison of K4B4G1646E-BMK0 by Samsung Electronics and IS43TR16256AL-125KBL by ISSI, Integrated Silicon Solution Inc. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4B4G1646E-BMK0

K4B4G1646E-BMK0 - 4Gb DDR3L SDRAM 1600Mbps | Samsung

K4B4G1646E-BMK0 βœ“ Active
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL

IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI

IS43TR16256AL-125KBL βœ“ Active

Specification Comparison

Parameter K4B4G1646E-BMK0 IS43TR16256AL-125KBL
Brand Samsung Electronics ISSI, Integrated Silicon Solution Inc
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $6.50 $5.60
Density 4 Gb β€”
Organization 256M x 16 β€”
Speed Grade 1600 Mbps β€”
Voltage 1.35 V β€”
Operating Temperature -40Β°C to +95Β°C 0Β°C ~ 95Β°C
Package 96-FBGA 96-TWBGA (9x13mm)
Interface Parallel Parallel
Clock Frequency 800 MHz 800 MHz
Data Rate 1600 Mbps 1600 Mbps
Memory Type DDR3L SDRAM SDRAM - DDR3L
Mounting Type Surface Mount Surface Mount
Auto Precharge Yes β€”
Asynchronous Reset Yes β€”
ZQ Calibration Yes β€”
Dynamic ODT Yes β€”
Data Mask Yes β€”
Memory Size β€” 4Gbit (256M x 16)
Access Time β€” 20 ns
Supply Voltage β€” 1.35V (backward compatible to 1.5V)
Memory Format β€” DRAM
Technology β€” SDRAM - DDR3L
RoHS Status β€” Compliant
Lead-Free β€” Yes
Number of Terminals β€” 96

Datasheets & Resources

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