K4B4G1646E-BMK0 vs IS43TR16256AL-125KBL 比較
詳細並排比較 K4B4G1646E-BMK0 由 Samsung Electronics 與 IS43TR16256AL-125KBL 由 ISSI, Integrated Silicon Solution Inc. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-125KBL ✓ 啟用中規格比較
| 參數 | K4B4G1646E-BMK0 | IS43TR16256AL-125KBL |
|---|---|---|
| 品牌 | Samsung Electronics | ISSI, Integrated Silicon Solution Inc |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| Density | 4 Gb | — |
| 組織 | 256M x 16 | — |
| Speed Grade | 1600 Mbps | — |
| Voltage | 1.35 V | — |
| 工作溫度 | -40°C to +95°C | 0°C ~ 95°C |
| 封裝 | 96-FBGA | 96-TWBGA (9x13mm) |
| 介面 | Parallel | Parallel |
| Clock Frequency | 800 MHz | 800 MHz |
| 資料速率 | 1600 Mbps | 1600 Mbps |
| 記憶體類型 | DDR3L SDRAM | SDRAM - DDR3L |
| 安裝類型 | Surface Mount | Surface Mount |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic ODT | Yes | — |
| Data Mask | Yes | — |
| 記憶體容量 | — | 4Gbit (256M x 16) |
| Access Time | — | 20 ns |
| 供應電壓 | — | 1.35V (backward compatible to 1.5V) |
| Memory Format | — | DRAM |
| Technology | — | SDRAM - DDR3L |
| RoHS 狀態 | — | Compliant |
| Lead-Free | — | Yes |
| Number of Terminals | — | 96 |