K4B4G1646E-BMK0 vs IS43TR16256AL-125KBL Perbandingan
Perbandingan bersamaan detil K4B4G1646E-BMK0 dari Samsung Electronics dan IS43TR16256AL-125KBL dari ISSI, Integrated Silicon Solution Inc. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-125KBL ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4B4G1646E-BMK0 | IS43TR16256AL-125KBL |
|---|---|---|
| Merek | Samsung Electronics | ISSI, Integrated Silicon Solution Inc |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Density | 4 Gb | — |
| Organisasi | 256M x 16 | — |
| Speed Grade | 1600 Mbps | — |
| Voltage | 1.35 V | — |
| Suhu Kerja | -40°C to +95°C | 0°C ~ 95°C |
| Paket | 96-FBGA | 96-TWBGA (9x13mm) |
| Antarmuka | Parallel | Parallel |
| Clock Frequency | 800 MHz | 800 MHz |
| Laju Data | 1600 Mbps | 1600 Mbps |
| Tipe Memori | DDR3L SDRAM | SDRAM - DDR3L |
| Tipe Mounting | Surface Mount | Surface Mount |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic ODT | Yes | — |
| Data Mask | Yes | — |
| Ukuran Memori | — | 4Gbit (256M x 16) |
| Access Time | — | 20 ns |
| Tegangan Pemuat | — | 1.35V (backward compatible to 1.5V) |
| Memory Format | — | DRAM |
| Technology | — | SDRAM - DDR3L |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Number of Terminals | — | 96 |