K4B4G1646E-BMK0 vs IS43TR16256AL-125KBL Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646E-BMK0 disebabkan oleh Samsung Electronics dan IS43TR16256AL-125KBL disebabkan oleh ISSI, Integrated Silicon Solution Inc. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-125KBL ✓ AktifPengandingan Spesifikasi
| Parametr | K4B4G1646E-BMK0 | IS43TR16256AL-125KBL |
|---|---|---|
| Merek | Samsung Electronics | ISSI, Integrated Silicon Solution Inc |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Density | 4 Gb | — |
| Organisasi | 256M x 16 | — |
| Speed Grade | 1600 Mbps | — |
| Voltage | 1.35 V | — |
| Suhu Operasi | -40°C to +95°C | 0°C ~ 95°C |
| Kemasan | 96-FBGA | 96-TWBGA (9x13mm) |
| Antaramuka | Parallel | Parallel |
| Clock Frequency | 800 MHz | 800 MHz |
| Kadar Data | 1600 Mbps | 1600 Mbps |
| Jenis Ingatan | DDR3L SDRAM | SDRAM - DDR3L |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic ODT | Yes | — |
| Data Mask | Yes | — |
| Saiz Ingatan | — | 4Gbit (256M x 16) |
| Access Time | — | 20 ns |
| Tegangan Pemberi Arus | — | 1.35V (backward compatible to 1.5V) |
| Memory Format | — | DRAM |
| Technology | — | SDRAM - DDR3L |
| Status RoHS | — | Compliant |
| Lead-Free | — | Yes |
| Number of Terminals | — | 96 |