K4B4G1646E-BMK0 vs MT41K256M16HA-125 Comparison
Detailed side-by-side comparison of K4B4G1646E-BMK0 by Samsung Electronics and MT41K256M16HA-125 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | K4B4G1646E-BMK0 | MT41K256M16HA-125 |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | — | $6.36 |
| Density | 4 Gb | — |
| Organization | 256M x 16 | — |
| Speed Grade | 1600 Mbps | — |
| Voltage | 1.35 V | — |
| Operating Temperature | -40°C to +95°C | [DATA_NEEDED: operating temperature range] |
| Package | 96-FBGA | 96-FBGA (9x14 mm) |
| Interface | Parallel | — |
| Clock Frequency | 800 MHz | 800 MHz |
| Data Rate | 1600 Mbps | — |
| Memory Type | DDR3L SDRAM | SDRAM - DDR3L |
| Mounting Type | Surface Mount | Surface Mount |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | — |
| Dynamic ODT | Yes | — |
| Data Mask | Yes | — |
| Memory Size | — | 4Gbit (256M x 16) |
| Data Bus Width | — | 16 bit |
| Access Time | — | 13.75 ns |
| Supply Voltage | — | 1.35 V |
| Number of Pins | — | 96 |
| RoHS Status | — | Compliant |
| Lead-Free | — | Yes |
| Logic Family | — | CMOS |
| Refresh Interval | — | 7.8 us at 85C |
| CAS Latency | — | 11 |