K4B4G1646E-BYK000 vs MT41K64M16TW-107 Comparison
Detailed side-by-side comparison of K4B4G1646E-BYK000 by Samsung Electronics and MT41K64M16TW-107 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BYK000 - 4Gb DDR3L SDRAM 256Mx16 | Samsung
K4B4G1646E-BYK000 ✓ ActiveMicron Technology
MT41K64M16TW-107 - 1Gbit DDR3L SDRAM 1866MT/s | Micron Technology
MT41K64M16TW-107 ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646E-BYK000 | MT41K64M16TW-107 |
|---|---|---|
| Brand | Samsung Electronics | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.56 | $2.95 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gbit | 1 Gbit |
| Organization | 256M x 16 | 64M x 16 |
| Speed Grade | DDR3-1600 (1.25 ns clock cycle) | — |
| Clock Frequency | 800 MHz | 933 MHz |
| CAS Latency (CL) | [DATA_NEEDED: CAS latency - 1.25 ns CL grade indicates CL11 but not explicitly stated in provided data] | — |
| Supply Voltage (VDD) | 1.35 V (DDR3L), 1.5 V compatible (DDR3) | — |
| Number of Banks | [DATA_NEEDED: bank count] | — |
| Die Process | Samsung E-die | — |
| Package | 96-FBGA (BYK) | 96-FBGA (8 x 14 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | Parallel | Parallel |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | 0C to +95C |
| Features | Auto precharge, asynchronous reset, ZQ calibration, dynamic on-chip termination, data mask | — |
| RoHS Status | [DATA_NEEDED: RoHS status] | Compliant (lead-free, halogen-free suffix J) |
| Access Time | 1.25 ns | 20 ns |
| Data Rate | — | 1866 MT/s (DDR3-1866 speed grade -107) |
| Supply Voltage | — | 1.35 V (1.283 V to 1.45 V) |
| Technology | — | CMOS DRAM |
| Refresh | — | Self refresh / auto refresh |
| Base Part Number | — | MT41K64M16 |
| Supply Voltage - DDR3 Compatible Mode | — | 1.5 V (refer to DDR3 datasheet specifications) |