K4B4G1646E-BYMATCV vs IS43TR16256AL-107MBL Comparison
Detailed side-by-side comparison of K4B4G1646E-BYMATCV by Samsung Electronics and IS43TR16256AL-107MBL by ISSI, Integrated Silicon Solution Inc. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646E-BYMATCV - 4Gb DDR3L SDRAM 96-FBGA | Samsung
K4B4G1646E-BYMATCV ✓ ActiveISSI, Integrated Silicon Solution Inc
IS43TR16256AL-107MBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-107MBL ✓ ActiveSpecification Comparison
| Parameter | K4B4G1646E-BYMATCV | IS43TR16256AL-107MBL |
|---|---|---|
| Brand | Samsung Electronics | ISSI, Integrated Silicon Solution Inc |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $5.90 | $6.00 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4 Gbit (256M x 16) | 4 Gbit |
| Data Rate | 1866 Mbps | 1866 MT/s |
| Supply Voltage | 1.35 V | 1.35 V |
| I/O Voltage (VDDQ) | 1.35 V | — |
| Package | 96-ball FBGA | 96-TWBGA (9x13 mm) |
| Number of Pins | 96 | — |
| Operating Temperature Range | -40°C to +95°C | — |
| Number of Banks | 8 | — |
| Burst Length | 8 (with burst chop 4) | 8 and 4 (with burst chop) |
| CAS Latency | Programmable (e.g., 13, 12, 11) | 13 |
| On-Die Termination (ODT) | Yes | — |
| Auto Precharge | Yes | — |
| Self-Refresh | Yes | — |
| RoHS Status | Compliant | Compliant |
| Organization | — | 256M x 16 |
| Clock Frequency | — | 933 MHz |
| Access Time | — | 20 ns |
| Interface | — | Parallel |
| Operating Temperature | — | 0°C to +95°C (case) |
| Mounting Type | — | Surface Mount |
| On-Die Termination | — | Yes (ODT) |