K4B4G1646Q vs IS43TR16256AL-125KBL Comparison
Detailed side-by-side comparison of K4B4G1646Q by Samsung Electronics and IS43TR16256AL-125KBL by ISSI, Integrated Silicon Solution Inc. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4B4G1646Q
K4B4G1646Q - 4Gb DDR3L SDRAM x16 96FBGA | Samsung
K4B4G1646Q β ActiveISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL
IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-125KBL β ActiveSpecification Comparison
| Parameter | K4B4G1646Q | IS43TR16256AL-125KBL |
|---|---|---|
| Brand | Samsung Electronics | ISSI, Integrated Silicon Solution Inc |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $6.50 | $5.60 |
| Memory Type | DDR3L SDRAM | SDRAM - DDR3L |
| Density | 4Gb | β |
| Organization | 256M x 16 | β |
| Data Bus Width | 16 bits | β |
| Supply Voltage | 1.35V | 1.35V (backward compatible to 1.5V) |
| Data Rate | 1866 Mbps (PC3-14900) | 1600 Mbps |
| Package | 96-ball FBGA | 96-TWBGA (9x13mm) |
| Die | Q-die | β |
| Lead-Free | Yes | Yes |
| Halogen-Free | Yes | β |
| RoHS Compliant | Yes | β |
| Burst Length | 8 (BL8) | β |
| On-Die Termination | Yes (ODT) | β |
| CAS Latency | Programmable | β |
| Operating Temperature | [DATA_NEEDED: Operating temperature range] | 0Β°C ~ 95Β°C |
| Memory Size | β | 4Gbit (256M x 16) |
| Interface | β | Parallel |
| Clock Frequency | β | 800 MHz |
| Access Time | β | 20 ns |
| Mounting Type | β | Surface Mount |
| Memory Format | β | DRAM |
| Technology | β | SDRAM - DDR3L |
| RoHS Status | β | Compliant |
| Number of Terminals | β | 96 |