K4B4G1646Q vs IS43TR16256AL-125KBL Perbandingan
Perbandingan bersamaan detil K4B4G1646Q dari Samsung Electronics dan IS43TR16256AL-125KBL dari ISSI, Integrated Silicon Solution Inc. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-125KBL ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | K4B4G1646Q | IS43TR16256AL-125KBL |
|---|---|---|
| Merek | Samsung Electronics | ISSI, Integrated Silicon Solution Inc |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR3L SDRAM | SDRAM - DDR3L |
| Density | 4Gb | — |
| Organisasi | 256M x 16 | — |
| Lebar Bus Data | 16 bits | — |
| Tegangan Pemuat | 1.35V | 1.35V (backward compatible to 1.5V) |
| Laju Data | 1866 Mbps (PC3-14900) | 1600 Mbps |
| Paket | 96-ball FBGA | 96-TWBGA (9x13mm) |
| Die | Q-die | — |
| Lead-Free | Yes | Yes |
| Bebas Halogen | Yes | — |
| RoHS Compliant | Yes | — |
| Burst Length | 8 (BL8) | — |
| On-Die Termination | Yes (ODT) | — |
| Latensi CAS | Programmable | — |
| Suhu Kerja | [DATA_NEEDED: Operating temperature range] | 0°C ~ 95°C |
| Ukuran Memori | — | 4Gbit (256M x 16) |
| Antarmuka | — | Parallel |
| Clock Frequency | — | 800 MHz |
| Access Time | — | 20 ns |
| Tipe Mounting | — | Surface Mount |
| Memory Format | — | DRAM |
| Technology | — | SDRAM - DDR3L |
| Status RoHS | — | Compliant |
| Number of Terminals | — | 96 |