K4B4G1646Q vs IS43TR16256AL-125KBL Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci K4B4G1646Q disebabkan oleh Samsung Electronics dan IS43TR16256AL-125KBL disebabkan oleh ISSI, Integrated Silicon Solution Inc. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
ISSI, Integrated Silicon Solution Inc
IS43TR16256AL-125KBL - 4Gb DDR3L SDRAM 256Mx16 | ISSI
IS43TR16256AL-125KBL ✓ AktifPengandingan Spesifikasi
| Parametr | K4B4G1646Q | IS43TR16256AL-125KBL |
|---|---|---|
| Merek | Samsung Electronics | ISSI, Integrated Silicon Solution Inc |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | SDRAM - DDR3L |
| Density | 4Gb | — |
| Organisasi | 256M x 16 | — |
| Lebar Bus Data | 16 bits | — |
| Tegangan Pemberi Arus | 1.35V | 1.35V (backward compatible to 1.5V) |
| Kadar Data | 1866 Mbps (PC3-14900) | 1600 Mbps |
| Kemasan | 96-ball FBGA | 96-TWBGA (9x13mm) |
| Die | Q-die | — |
| Lead-Free | Yes | Yes |
| Boson Bebas | Yes | — |
| RoHS Compliant | Yes | — |
| Burst Length | 8 (BL8) | — |
| On-Die Termination | Yes (ODT) | — |
| Latensi CAS | Programmable | — |
| Suhu Operasi | [DATA_NEEDED: Operating temperature range] | 0°C ~ 95°C |
| Saiz Ingatan | — | 4Gbit (256M x 16) |
| Antaramuka | — | Parallel |
| Clock Frequency | — | 800 MHz |
| Access Time | — | 20 ns |
| Jenis Pemasangan | — | Surface Mount |
| Memory Format | — | DRAM |
| Technology | — | SDRAM - DDR3L |
| Status RoHS | — | Compliant |
| Number of Terminals | — | 96 |