K4B4G1646Q vs MT41K256M16HA-125 Comparison

Detailed side-by-side comparison of K4B4G1646Q by Samsung Electronics and MT41K256M16HA-125 by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4B4G1646Q K4B4G1646Q - 4Gb DDR3L SDRAM x16 96FBGA | Samsung

K4B4G1646Q - 4Gb DDR3L SDRAM x16 96FBGA | Samsung

K4B4G1646Q ✓ Active
Micron Technology
MT41K256M16HA-125 MT41K256M16HA-125 - 4Gbit DDR3L SDRAM 800MHz | Micron

MT41K256M16HA-125 - 4Gbit DDR3L SDRAM 800MHz | Micron

MT41K256M16HA-125 ✓ Active

Specification Comparison

Parameter K4B4G1646Q MT41K256M16HA-125
Brand Samsung Electronics Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Unit Price (USD) — $6.36
Memory Type DDR3L SDRAM SDRAM - DDR3L
Density 4Gb —
Organization 256M x 16 —
Data Bus Width 16 bits 16 bit
Supply Voltage 1.35V 1.35 V
Data Rate 1866 Mbps (PC3-14900) —
Package 96-ball FBGA 96-FBGA (9x14 mm)
Die Q-die —
Lead-Free Yes Yes
Halogen Free Yes —
RoHS Compliant Yes —
Burst Length 8 (BL8) —
On-Die Termination Yes (ODT) —
CAS Latency Programmable 11
Operating Temperature [DATA_NEEDED: Operating temperature range] [DATA_NEEDED: operating temperature range]
Memory Size — 4Gbit (256M x 16)
Clock Frequency — 800 MHz
Access Time — 13.75 ns
Number of Pins — 96
Mounting Type — Surface Mount
RoHS Status — Compliant
Logic Family — CMOS
Refresh Interval — 7.8 us at 85C

Datasheets & Resources

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