K4RAH165VB-BCQK vs K4RHE165VB-BCWM Comparison

Detailed side-by-side comparison of K4RAH165VB-BCQK by Samsung Electronics and K4RHE165VB-BCWM by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Samsung Electronics
K4RAH165VB-BCQK K4RAH165VB-BCQK - 16Gb DDR5 SDRAM 4800Mbps 1.1V | Samsung

K4RAH165VB-BCQK - 16Gb DDR5 SDRAM 4800Mbps 1.1V | Samsung

K4RAH165VB-BCQK ✓ Active
Samsung Electronics
K4RHE165VB-BCWM K4RHE165VB-BCWM - 24Gb DDR5 SDRAM 5600Mbps 1.1V | Samsung

K4RHE165VB-BCWM - 24Gb DDR5 SDRAM 5600Mbps 1.1V | Samsung

K4RHE165VB-BCWM ✓ Active

Specification Comparison

Parameter K4RAH165VB-BCQK K4RHE165VB-BCWM
Brand Samsung Electronics Samsung Electronics
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.00 $0.00
Memory Type DDR5 SDRAM DDR5 SDRAM
Memory Size 16 Gb —
Memory Organization 1G x 16 —
Memory Interface Parallel —
Data Rate 4800 Mbps 5600 Mbps
Supply Voltage (VDD) 1.1 V —
Error Correction On-die ECC —
Features Auto self-refresh, asynchronous reset, on-chip ECC, write leveling, CRC, ZQ calibration —
Operating Temperature 0C to +85C 0 to 85 C
Package 106-ball FBGA 106 FBGA
Mounting Type Surface Mount Surface Mount (BGA)
Memory Format DRAM (volatile) —
Packaging Tray —
Lifecycle Status Active —
RoHS Status [DATA_NEEDED: RoHS status] [DATA_NEEDED: RoHS Status]
Unit Price [DATA_NEEDED: unit price] —
Density — 24 Gb (3 GB)
Organization — 1G x 16
Supply Voltage — 1.1 V
Product Status — Mass Production
Interface — DDR5 (parallel, DDR)
Access Type — Synchronous
Clock Rate (nominal) — 2800 MHz (5600 MT/s DDR)
Ball Count — 106
MSL Level — [DATA_NEEDED: MSL Level]
Standard Pack Quantity — [DATA_NEEDED: Standard Pack Quantity]

Datasheets & Resources

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