K4RAH165VB-BCQK vs K4RHE165VB-BCWM 对比
详细并排对比 K4RAH165VB-BCQK 出自 Samsung Electronics 和 K4RHE165VB-BCWM 出自 Samsung Electronics。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | K4RAH165VB-BCQK | K4RHE165VB-BCWM |
|---|---|---|
| 品牌 | Samsung Electronics | Samsung Electronics |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.00 | $0.00 |
| 存储器类型 | DDR5 SDRAM | DDR5 SDRAM |
| 存储容量 | 16 Gb | — |
| Memory Organization | 1G x 16 | — |
| Memory Interface | Parallel | — |
| 数据速率 | 4800 Mbps | 5600 Mbps |
| Supply Voltage (VDD) | 1.1 V | — |
| Error Correction | On-die ECC | — |
| 特性 | Auto self-refresh, asynchronous reset, on-chip ECC, write leveling, CRC, ZQ calibration | — |
| 工作温度 | 0C to +85C | 0 to 85 C |
| 封装 | 106-ball FBGA | 106 FBGA |
| 安装类型 | Surface Mount | Surface Mount (BGA) |
| Memory Format | DRAM (volatile) | — |
| Packaging | Tray | — |
| 生命周期状态 | Active | — |
| RoHS 状态 | [DATA_NEEDED: RoHS status] | [DATA_NEEDED: RoHS Status] |
| Unit Price | [DATA_NEEDED: unit price] | — |
| Density | — | 24 Gb (3 GB) |
| 存储组织 | — | 1G x 16 |
| 电源电压 | — | 1.1 V |
| Product Status | — | Mass Production |
| 接口 | — | DDR5 (parallel, DDR) |
| Access Type | — | Synchronous |
| Clock Rate (nominal) | — | 2800 MHz (5600 MT/s DDR) |
| Ball Count | — | 106 |
| MSL 等级 | — | [DATA_NEEDED: MSL Level] |
| Standard Pack Quantity | — | [DATA_NEEDED: Standard Pack Quantity] |