MT41K256M16LY-107 vs K4B4G1646E-BYMA Comparison
Detailed side-by-side comparison of MT41K256M16LY-107 by Micron Technology and K4B4G1646E-BYMA by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Micron Technology
MT41K256M16LY-107
MT41K256M16LY-107 - 4Gbit DDR3L SDRAM 933MHz | Micron
MT41K256M16LY-107 β Active
Specification Comparison
| Parameter | MT41K256M16LY-107 | K4B4G1646E-BYMA |
|---|---|---|
| Brand | Micron Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.25 | $14.32 |
| Memory Type | DDR3L SDRAM | DDR3L SDRAM |
| Memory Size | 4Gbit (256M x 16) | β |
| Data Bus Width | 16 bit | β |
| Clock Frequency | 933 MHz | 933 MHz |
| CAS Latency | 20 ns | [DATA_NEEDED: CAS Latency] |
| Supply Voltage | 1.35V / 1.5V | 1.35 V (1.28 V to 1.575 V) |
| Package | 96-FBGA (7.5x13.5 mm) | FBGA-96 |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | [DATA_NEEDED: operating temperature range] | 0Β°C to +95Β°C |
| Data Rate | 1866 MT/s | 1866 Mbps/pin |
| Burst Length | 8, 4 | [DATA_NEEDED: Burst Length] |
| Number of Pins | 96 | 96 |
| RoHS Status | Compliant | β |
| REACH Status | Compliant | β |
| Memory Format | DRAM | β |
| Density | β | 4 Gb |
| Organization | β | 256M x 16 |
| Operating Current | β | 14 mA |
| Standby Current | β | 2 mA, 3 mA |
| RoHS | β | Compliant |