MT41K256M16MTW-107IT vs K4B4G1646E-BYK0 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MT41K256M16MTW-107IT disebabkan oleh Micron Technology dan K4B4G1646E-BYK0 disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Micron Technology
MT41K256M16MTW-107IT - 4Gb DDR3L SDRAM 933MHz | Micron
MT41K256M16MTW-107IT ✓ AktifPengandingan Spesifikasi
| Parametr | MT41K256M16MTW-107IT | K4B4G1646E-BYK0 |
|---|---|---|
| Merek | Micron Technology | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR3L SDRAM | DDR3L SDRAM |
| Saiz Ingatan | 4 Gbit (256M x 16) | — |
| Clock Speed | 933 MHz | — |
| Lebar Bus Data | 16 bit | — |
| Tegangan Pemberi Arus | 1.35 V | 1.35 V (1.283 V to 1.45 V) |
| Row Cycle Time (tRC) | 20 ns | — |
| Latensi CAS | 13 | 11 (CL-tRCD-tRP) |
| Gambaran Suhu Operasi | -40°C to +95°C | — |
| Kemasan | 96-FBGA (8x14 mm) | 96-ball FBGA (13 x 9 mm, 0.8 mm pitch) |
| Jenis Pemasangan | Surface Mount | — |
| Antaramuka | Parallel | — |
| Access Time | 0.195 ns | — |
| Status RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Technology | CMOS | — |
| Density | — | 4 Gb |
| Organisasi | — | 256M x 16 |
| Kadar Data | — | DDR3-1600 (800 MHz) |
| Suhu Operasi | — | 0°C to +95°C (TC) |
| Burst Length | — | 8 (fixed), 4 (burst chop) |
| On-Die Termination | — | Yes (dynamic ODT) |
| ZQ Calibration | — | Yes |
| Auto Precharge | — | Yes |
| Self-Refresh | — | Yes |
| Asynchronous Reset | — | Yes |
| Data Mask | — | Yes |
| RoHS | — | Compliant |