NT5AD512M16A4-GZ vs K4A8G165WB-BCWE Comparison
Detailed side-by-side comparison of NT5AD512M16A4-GZ by Nanya Technology and K4A8G165WB-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE ✓ ActiveSpecification Comparison
| Parameter | NT5AD512M16A4-GZ | K4A8G165WB-BCWE |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | — | In Stock |
| Unit Price (USD) | — | $6.25 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Organization | 512M x 16 | — |
| Density | 8Gb | — |
| Supply Voltage | 1.2V | 1.2 V |
| Maximum Clock Frequency | 1200 MHz | — |
| Data Bus Width | 16 bits | — |
| Package | TFBGA-96 | 96FBGA |
| Number of Terminals | 96 | — |
| Interleaved Burst Length | 4, 8 | — |
| Access Mode | Four Bank Page Burst | — |
| Operating Temperature Range | Commercial and Industrial | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| CRC Function | Yes | — |
| Data Mask Function | Yes | — |
| Write Leveling Function | Yes | — |
| ZQ Calibration Function | Yes | — |
| Memory Size | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| Data Rate | — | 3200 Mbps/pin |
| Access Time | — | 19 ns |
| Interface | — | Parallel |
| Operating Temperature | — | 0C to +85C |
| Mounting Type | — | Surface Mount |
| Memory Format | — | DRAM (volatile) |
| Technology | — | DDR4 SDRAM B-die |
| Prefetch | — | 8n |
| Refresh | — | Self-refresh supported |
| Termination | — | On-die termination (ODT) |
| RoHS Status | — | [DATA_NEEDED: RoHS compliance statement] |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |