NT5AD512M16A4-GZ vs K4A8G165WB-BCWE Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci NT5AD512M16A4-GZ disebabkan oleh Nanya Technology dan K4A8G165WB-BCWE disebabkan oleh Samsung Electronics. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Samsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE ✓ AktifPengandingan Spesifikasi
| Parametr | NT5AD512M16A4-GZ | K4A8G165WB-BCWE |
|---|---|---|
| Merek | Nanya Technology | Samsung Electronics |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Status Stok | — | In Stock |
| Harga Unit (USD) | — | $6.25 |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Organisasi | 512M x 16 | — |
| Density | 8Gb | — |
| Tegangan Pemberi Arus | 1.2V | 1.2 V |
| Frekuensi Klock Maksimum | 1200 MHz | — |
| Lebar Bus Data | 16 bits | — |
| Kemasan | TFBGA-96 | 96FBGA |
| Number of Terminals | 96 | — |
| Interleaved Burst Length | 4, 8 | — |
| Access Mode | Four Bank Page Burst | — |
| Gambaran Suhu Operasi | Commercial and Industrial | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| CRC Function | Yes | — |
| Data Mask Function | Yes | — |
| Write Leveling Function | Yes | — |
| ZQ Calibration Function | Yes | — |
| Saiz Ingatan | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| Kadar Data | — | 3200 Mbps/pin |
| Access Time | — | 19 ns |
| Antaramuka | — | Parallel |
| Suhu Operasi | — | 0C to +85C |
| Jenis Pemasangan | — | Surface Mount |
| Memory Format | — | DRAM (volatile) |
| Technology | — | DDR4 SDRAM B-die |
| Prefetch | — | 8n |
| Refresh | — | Self-refresh supported |
| Termination | — | On-die termination (ODT) |
| Status RoHS | — | [DATA_NEEDED: RoHS compliance statement] |
| Aras MSL | — | [DATA_NEEDED: moisture sensitivity level] |