NT5AD512M16A4-GZ vs K4A8G165WB-BCWE 比較
詳細並排比較 NT5AD512M16A4-GZ 由 Nanya Technology 與 K4A8G165WB-BCWE 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | NT5AD512M16A4-GZ | K4A8G165WB-BCWE |
|---|---|---|
| 品牌 | Nanya Technology | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | — | In Stock |
| 單價 (USD) | — | $6.25 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| 組織 | 512M x 16 | — |
| Density | 8Gb | — |
| 供應電壓 | 1.2V | 1.2 V |
| 最大時脈頻率 | 1200 MHz | — |
| 資料匯流排寬度 | 16 bits | — |
| 封裝 | TFBGA-96 | 96FBGA |
| Number of Terminals | 96 | — |
| Interleaved Burst Length | 4, 8 | — |
| Access Mode | Four Bank Page Burst | — |
| 工作溫度範圍 | Commercial and Industrial | — |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| CRC Function | Yes | — |
| Data Mask Function | Yes | — |
| Write Leveling Function | Yes | — |
| ZQ Calibration Function | Yes | — |
| 記憶體容量 | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| 資料速率 | — | 3200 Mbps/pin |
| Access Time | — | 19 ns |
| 介面 | — | Parallel |
| 工作溫度 | — | 0C to +85C |
| 安裝類型 | — | Surface Mount |
| Memory Format | — | DRAM (volatile) |
| Technology | — | DDR4 SDRAM B-die |
| Prefetch | — | 8n |
| Refresh | — | Self-refresh supported |
| Termination | — | On-die termination (ODT) |
| RoHS 狀態 | — | [DATA_NEEDED: RoHS compliance statement] |
| MSL 等級 | — | [DATA_NEEDED: moisture sensitivity level] |