NT5AD512M16B4-HR vs K4A8G165WB-BCWE Comparison
Detailed side-by-side comparison of NT5AD512M16B4-HR by Nanya Technology and K4A8G165WB-BCWE by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Nanya Technology
NT5AD512M16B4-HR
NT5AD512M16B4-HR - 8Gb DDR4 SDRAM 512Mx16 1.2V | Nanya
NT5AD512M16B4-HR β ActiveSamsung Electronics
K4A8G165WB-BCWE
K4A8G165WB-BCWE - 8Gb DDR4 SDRAM 3200Mbps 1.2V | Samsung
K4A8G165WB-BCWE β ActiveSpecification Comparison
| Parameter | NT5AD512M16B4-HR | K4A8G165WB-BCWE |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $43.10 | $6.55 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8Gb | 8 Gb |
| Organization | 512M x 16 | 512M x 16 |
| Supply Voltage | 1.2V | 1.2 V |
| Package | 96-ball TFBGA | 96FBGA |
| Temperature Range | 0Β°C to +95Β°C | β |
| Data Rate | 3200 Mbps | 3200 Mbps |
| Auto Self-Refresh | Yes | β |
| Built-in Temperature Sensor | Yes | β |
| Auto Precharge | Yes | β |
| Asynchronous Reset | Yes | β |
| Data Mask | Yes | β |
| Write Leveling | Yes | β |
| Dynamic On-Chip Termination | Yes | β |
| ZQ Calibration | Yes | β |
| CRC Function | Yes | β |
| RoHS | Compliant | β |
| Access Time (CAS Latency) | β | 19 ns |
| Interface | β | Parallel |
| Mounting Type | β | Surface Mount |
| Operating Temperature | β | 0C to +85C |
| Burst Length | β | 8 |
| Bank Group Architecture | β | Yes |
| On-Die Termination (ODT) | β | Yes, dynamic ODT with ZQ calibration |
| Functions | β | Auto precharge, asynchronous reset, CRC, data mask |
| RoHS Status | β | Compliant |
| Lead Free | β | Yes |