NT5AD512M16B4-HR vs K4A8G165WB-BCWE 比較
詳細並排比較 NT5AD512M16B4-HR 由 Nanya Technology 與 K4A8G165WB-BCWE 由 Samsung Electronics. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況，以找出最符合您設計需求的元件。
規格比較
| 參數 | NT5AD512M16B4-HR | K4A8G165WB-BCWE |
|---|---|---|
| 品牌 | Nanya Technology | Samsung Electronics |
| 類別 | Memory ICs | Memory ICs |
| 生命週期狀態 | 啟用中 | 啟用中 |
| 庫存狀態 | — | In Stock |
| 單價 (USD) | — | $6.25 |
| 記憶體類型 | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8Gb | — |
| 組織 | 512M x 16 | — |
| 供應電壓 | 1.2V | 1.2 V |
| 封裝 | 96-ball TFBGA | 96FBGA |
| Temperature Range | 0°C to +95°C | — |
| 資料速率 | 3200 Mbps | 3200 Mbps/pin |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| RoHS | Compliant | — |
| 記憶體容量 | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| Access Time | — | 19 ns |
| 介面 | — | Parallel |
| 工作溫度 | — | 0C to +85C |
| 安裝類型 | — | Surface Mount |
| Memory Format | — | DRAM (volatile) |
| Technology | — | DDR4 SDRAM B-die |
| Prefetch | — | 8n |
| Refresh | — | Self-refresh supported |
| Termination | — | On-die termination (ODT) |
| RoHS 狀態 | — | [DATA_NEEDED: RoHS compliance statement] |
| MSL 等級 | — | [DATA_NEEDED: moisture sensitivity level] |