NT5AD512M16B4-HR vs K4A8G165WB-BCWE Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng NT5AD512M16B4-HR sa pamamagitan ng Nanya Technology at K4A8G165WB-BCWE sa pamamagitan ng Samsung Electronics. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Nanya Technology
NT5AD512M16B4-HR - 8Gb DDR4 SDRAM 512Mx16 1.2V | Nanya
NT5AD512M16B4-HR ✓ NakahandaSamsung Electronics
K4A8G165WB-BCWE - 8Gb DDR4 3200Mbps 96FBGA DRAM | Samsung
K4A8G165WB-BCWE ✓ NakahandaPagsanggunian na paghahambing
| Parametro | NT5AD512M16B4-HR | K4A8G165WB-BCWE |
|---|---|---|
| Brand | Nanya Technology | Samsung Electronics |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Katayuan ng Stock | — | In Stock |
| Presyo ng Yunit (USD) | — | $6.25 |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8Gb | — |
| Organisasyon | 512M x 16 | — |
| Volte ng Pagbibigay | 1.2V | 1.2 V |
| Packhaging | 96-ball TFBGA | 96FBGA |
| Temperature Range | 0°C to +95°C | — |
| Rate ng Data | 3200 Mbps | 3200 Mbps/pin |
| Auto Self-Refresh | Yes | — |
| Built-in Temperature Sensor | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask | Yes | — |
| Write Leveling | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| RoHS | Compliant | — |
| Laki ng Memory | — | 8 Gb |
| Memory Organization | — | 512M x 16 |
| Access Time | — | 19 ns |
| Interface | — | Parallel |
| Temperature na Operasyon | — | 0C to +85C |
| Uri ng Pagpapasok | — | Surface Mount |
| Memory Format | — | DRAM (volatile) |
| Technology | — | DDR4 SDRAM B-die |
| Prefetch | — | 8n |
| Refresh | — | Self-refresh supported |
| Termination | — | On-die termination (ODT) |
| Tindminan RoHS | — | [DATA_NEEDED: RoHS compliance statement] |
| Level ng MSL | — | [DATA_NEEDED: moisture sensitivity level] |