NT6AN8T6WBJ1B1 vs MT40A512M16JY-075E Comparison
Detailed side-by-side comparison of NT6AN8T6WBJ1B1 by Nanya Technology and MT40A512M16JY-075E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | NT6AN8T6WBJ1B1 | MT40A512M16JY-075E |
|---|---|---|
| Brand | Nanya Technology | Micron Technology |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gb (512M x 16) | 8 Gbit |
| Data Rate | 3200 MT/s | 2666 MT/s |
| Supply Voltage | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| CAS Latency | 22 cycles | — |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| Package | 96-ball FBGA | 96-FBGA (8x14) |
| Operating Temperature | 0C to +95C (TC) | — |
| Refresh | Auto-refresh, self-refresh | — |
| On-Die Termination | Yes (ODT) | — |
| Bank Groups | 4 groups of 4 banks | — |
| Row Address | 16 bits | — |
| Column Address | 10 bits | — |
| RoHS Status | Compliant | Compliant |
| Organization | — | 512M x 16 |
| Clock Frequency | — | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | — | 1.14V to 1.26V |
| VPP Voltage | — | 2.5V (-125mV, +250mV) |
| Interface | — | Parallel |
| Mounting Type | — | Surface Mount |
| Operating Temperature Range | — | 0°C to +95°C (TC) |
| Refresh Time | — | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C |
| Features | — | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC |
| I/O Type | — | 1.2V pseudo open-drain |