NT6AN8T6WBJ1B1 vs MT40A512M16JY-075E Perbandingan
Perbandingan bersamaan detil NT6AN8T6WBJ1B1 dari Nanya Technology dan MT40A512M16JY-075E dari Micron Technology. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Perbandingan Spesifikasi
| Parameter Umum | NT6AN8T6WBJ1B1 | MT40A512M16JY-075E |
|---|---|---|
| Merek | Nanya Technology | Micron Technology |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Tipe Memori | DDR4 SDRAM | DDR4 SDRAM |
| Ukuran Memori | 8 Gb (512M x 16) | 8 Gbit |
| Laju Data | 3200 MT/s | 2666 MT/s |
| Tegangan Pemuat | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Latensi CAS | 22 cycles | — |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| Paket | 96-ball FBGA | 96-FBGA (8x14) |
| Suhu Kerja | 0C to +95C (TC) | — |
| Refresh | Auto-refresh, self-refresh | — |
| On-Die Termination | Yes (ODT) | — |
| Bank Groups | 4 groups of 4 banks | — |
| Row Address | 16 bits | — |
| Column Address | 10 bits | — |
| Status RoHS | Compliant | Compliant |
| Organisasi | — | 512M x 16 |
| Clock Frequency | — | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | — | 1.14V to 1.26V |
| VPP Voltage | — | 2.5V (-125mV, +250mV) |
| Antarmuka | — | Parallel |
| Tipe Mounting | — | Surface Mount |
| Rentang Suhu Kerja | — | 0°C to +95°C (TC) |
| Refresh Time | — | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C |
| Fitur | — | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC |
| I/O Type | — | 1.2V pseudo open-drain |