NT6AN8T6WBJ1B1 vs MT40A512M16JY-075E Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng NT6AN8T6WBJ1B1 sa pamamagitan ng Nanya Technology at MT40A512M16JY-075E sa pamamagitan ng Micron Technology. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Micron Technology
MT40A512M16JY-075E - 8Gb DDR4 SDRAM 512Mx16 | Micron
MT40A512M16JY-075E ✓ NakahandaPagsanggunian na paghahambing
| Parametro | NT6AN8T6WBJ1B1 | MT40A512M16JY-075E |
|---|---|---|
| Brand | Nanya Technology | Micron Technology |
| Kategorya | Memory ICs | Memory ICs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Uri ng Memory | DDR4 SDRAM | DDR4 SDRAM |
| Laki ng Memory | 8 Gb (512M x 16) | 8 Gbit |
| Rate ng Data | 3200 MT/s | 2666 MT/s |
| Volte ng Pagbibigay | 1.2 V | — |
| I/O Voltage (VDDQ) | 1.2 V | — |
| Latensya ng CAS | 22 cycles | — |
| Burst Length | 8 (BL8), 4 (BC4) | — |
| Packhaging | 96-ball FBGA | 96-FBGA (8x14) |
| Temperature na Operasyon | 0C to +95C (TC) | — |
| Refresh | Auto-refresh, self-refresh | — |
| On-Die Termination | Yes (ODT) | — |
| Bank Groups | 4 groups of 4 banks | — |
| Row Address | 16 bits | — |
| Column Address | 10 bits | — |
| Tindminan RoHS | Compliant | Compliant |
| Organisasyon | — | 512M x 16 |
| Clock Frequency | — | 1.33 GHz |
| Supply Voltage (VDD/VDDQ) | — | 1.14V to 1.26V |
| VPP Voltage | — | 2.5V (-125mV, +250mV) |
| Interface | — | Parallel |
| Uri ng Pagpapasok | — | Surface Mount |
| Hanay ng Temperature na Operasyon | — | 0°C to +95°C (TC) |
| Refresh Time | — | 8192 cycles; 64ms at -40°C to 85°C, 32ms at >85°C to 95°C, 16ms at >95°C |
| Mga Karakteristika | — | Auto precharge, data mask, dynamic on-chip termination, write leveling, auto self-refresh, CRC |
| I/O Type | — | 1.2V pseudo open-drain |