YZ38F16SBB-9MFD-M vs H5TC4G63AFR-PBA Comparison

Detailed side-by-side comparison of YZ38F16SBB-9MFD-M by Loongtion and H5TC4G63AFR-PBA by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Loongtion
YZ38F16SBB-9MFD-M YZ38F16SBB-9MFD-M - 4Gb DDR3L Industrial DRAM | Loongtion

YZ38F16SBB-9MFD-M - 4Gb DDR3L Industrial DRAM | Loongtion

YZ38F16SBB-9MFD-M ✓ Active
SK hynix
H5TC4G63AFR-PBA H5TC4G63AFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63AFR-PBA - 4Gb DDR3L SDRAM 256Mx16 | SK hynix

H5TC4G63AFR-PBA ✓ Active

Specification Comparison

Parameter YZ38F16SBB-9MFD-M H5TC4G63AFR-PBA
Brand Loongtion SK hynix
Category DRAM Memory ICs
Lifecycle Status Active Active
Unit Price (USD) — $3.98
Memory Type DDR3L SDRAM DDR3L SDRAM
Density 4Gb 4Gb
Organization 256M x 16 256M x 16
Package 96-ball FBGA 96-ball FBGA
Supply Voltage 1.35V / 1.5V —
Speed Grade -9 (DDR3-1866) —
Operating Temperature -40°C to +85°C —
Interface JEDEC DDR3 16-bit I/O
ZQ Calibration External 240Ω ±1% resistor Yes
RoHS Compliant Compliant
Lead-Free Yes —
Mounting Type Surface Mount —
Pin Count 96 —
Data Rate 1866 Mbps 1866 Mbps (PC3L-14900)
CAS Latency [DATA_NEEDED: CAS Latency] —
Supply Voltage (VDD/VDDQ) — 1.35V
Ball Pitch — 0.8mm
Number of Banks — 8
Burst Length — 8 and 4 (with burst chop)
CAS Latency (CL) — 11, 12, 13
Operating Temperature Range — 0°C to +95°C (Tcase)
On-Die Termination (ODT) — Yes
Write Leveling — Yes
Auto Self-Refresh — Yes
Partial Array Self-Refresh — Yes

Datasheets & Resources

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