YZ48G08V-F9HPI-M vs H5AN8G6NDJR Comparison
Detailed side-by-side comparison of YZ48G08V-F9HPI-M by Loongtion and H5AN8G6NDJR by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | YZ48G08V-F9HPI-M | H5AN8G6NDJR |
|---|---|---|
| Brand | Loongtion | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organization | 1G x 8 | 512M x 16 |
| Data Rate | 3200 MT/s | 3200 Mbps (DDR4-3200) |
| Supply Voltage | 1.2 V | 1.2 V |
| Operating Temperature Range | -40°C to +85°C | — |
| Package Type | FBGA78 | — |
| Mounting Type | Surface Mount | — |
| Interface | Parallel | — |
| CAS Latency | [DATA_NEEDED: CAS Latency] | 22 cycles (at 3200 Mbps) |
| Row Cycle Time (tRC) | [DATA_NEEDED: tRC] | — |
| Refresh Cycle Time (tRFC) | [DATA_NEEDED: tRFC] | — |
| RoHS Status | Compliant | — |
| REACH Status | Compliant | — |
| AEC-Q100 | Not Applicable | — |
| Package | — | 96-ball FBGA (13mm x 7.5mm) |
| Number of Terminals | — | 96 |
| Maximum Supply Voltage (Vsup) | — | 1.26 V |
| Maximum Operating Temperature | — | 85 °C |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| Access Mode | — | Multi Bank Page Burst |
| JESD-30 Code | — | R-PBGA-B96 |
| RoHS | — | Compliant |
| Features | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |