YZ48G08V-F9HPI-M vs H5AN8G6NDJR Comparison

Detailed side-by-side comparison of YZ48G08V-F9HPI-M by Loongtion and H5AN8G6NDJR by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Loongtion
YZ48G08V-F9HPI-M

YZ48G08V-F9HPI-M - 8Gb DDR4 SDRAM, 3200 MT/s | Loongtion

YZ48G08V-F9HPI-M βœ“ Active
SK hynix
H5AN8G6NDJR

H5AN8G6NDJR - 8Gb DDR4-3200 SDRAM | SK hynix

H5AN8G6NDJR βœ“ Active

Specification Comparison

Parameter YZ48G08V-F9HPI-M H5AN8G6NDJR
Brand Loongtion SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $7.20 $35.00
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 8 Gb 8 Gb
Organization 1G x 8 512M x 16
Data Rate 3200 MT/s 3200 Mbps (DDR4-3200)
Supply Voltage 1.2 V 1.2 V
Operating Temperature Range -40Β°C to +85Β°C β€”
Package Type FBGA78 β€”
Mounting Type Surface Mount β€”
Interface Parallel β€”
CAS Latency [DATA_NEEDED: CAS Latency] 22 cycles (at 3200 Mbps)
Row Cycle Time (tRC) [DATA_NEEDED: tRC] β€”
Refresh Cycle Time (tRFC) [DATA_NEEDED: tRFC] β€”
RoHS Status Compliant β€”
REACH Status Compliant β€”
AEC-Q100 Not Applicable β€”
Package β€” 96-ball FBGA (13mm x 7.5mm)
Number of Terminals β€” 96
Maximum Supply Voltage (Vsup) β€” 1.26 V
Maximum Operating Temperature β€” 85 Β°C
Burst Length β€” 8 (BL8), 4 (BC4)
Access Mode β€” Multi Bank Page Burst
JESD-30 Code β€” R-PBGA-B96
RoHS β€” Compliant
Features β€” Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling

Datasheets & Resources

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