YZ48G08V-F9HPI-M vs H5AN8G6NDJR Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci YZ48G08V-F9HPI-M disebabkan oleh Loongtion dan H5AN8G6NDJR disebabkan oleh SK hynix. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | YZ48G08V-F9HPI-M | H5AN8G6NDJR |
|---|---|---|
| Merek | Loongtion | SK hynix |
| Kategori | Memory ICs | Memory ICs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Jenis Ingatan | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | 8 Gb |
| Organisasi | 1G x 8 | 512M x 16 |
| Kadar Data | 3200 MT/s | 3200 Mbps (DDR4-3200) |
| Tegangan Pemberi Arus | 1.2 V | 1.2 V |
| Gambaran Suhu Operasi | -40°C to +85°C | — |
| Package Type | FBGA78 | — |
| Jenis Pemasangan | Surface Mount | — |
| Antaramuka | Parallel | — |
| Latensi CAS | [DATA_NEEDED: CAS Latency] | 22 cycles (at 3200 Mbps) |
| Row Cycle Time (tRC) | [DATA_NEEDED: tRC] | — |
| Refresh Cycle Time (tRFC) | [DATA_NEEDED: tRFC] | — |
| Status RoHS | Compliant | — |
| REACH Status | Compliant | — |
| AEC-Q100 | Not Applicable | — |
| Kemasan | — | 96-ball FBGA (13mm x 7.5mm) |
| Number of Terminals | — | 96 |
| Maximum Supply Voltage (Vsup) | — | 1.26 V |
| Maximum Operating Temperature | — | 85 °C |
| Burst Length | — | 8 (BL8), 4 (BC4) |
| Access Mode | — | Multi Bank Page Burst |
| JESD-30 Code | — | R-PBGA-B96 |
| RoHS | — | Compliant |
| Ciri-ciri | — | Auto self-refresh, auto precharge, asynchronous reset, data mask, dynamic ODT, ZQ calibration, CRC, write leveling |