MOSFETs
Produkte (1294)
MRF5S19060MR1 - 12W RF Power MOSFET 1930-1990 MHz TO-270 | NXP
The NXP (formerly Freescale Semiconductor) MRF5S19060MR1 is an N-channel enhancement-mode lateral RF power MOSFET designed for broadband commercial and industrial base-station applications in the 1930 MHz to 1990 MHz band, including 2 x N-CDMA, PCS, and PCN infrastructure. It delivers 12 W average output power (60 W PEP typical class-AB final-stage) at 28 V, with a nominal power gain of 14 dB and roughly 45% drain efficiency at the rated condition. An RF power MOSFET is a lateral double-diffused (LDMOS) transistor whose internal layout combines a short, low-loss gate structure with a high breakdown drain drift region, enabling high gain, broadband operation, and high ruggedness versus older bipolar or GaAs parts. LDMOS technology inherits from power MOSFET process nodes and is the dominant building block for sub-6 GHz base-station power amplifiers because it pairs silicon-economy pricing with sufficient RF performance for cellular PA macros and small cells. Key features of the MRF5S19060MR1 include integrated ESD protection, an internal input matching network that simplifies PCB-level wideband design, gold metallization on the source and gate pads for long-term reliability, and a thermally-enhanced TO-270 WB-4 ceramic package. The part is specified for class-AB operation with a quiescent point (Iq) typically set near 100 mA for linear 2 x N-CDMA waveforms. Per the NXP/Freescale datasheet, the device supports broadband performance across the full 1930-1990 MHz PCS/UMTS band without retuning. Architecturally, the MRF5S19060MR1 uses a single-stage common-source LDMOS die with on-drain feed; the WB-4 package exposes the drain on the flange while the gate and source are brought out as bond-wire leads. This pinout is the de-facto standard for the MRF5S family and the entire high-power LDMOS cellular PA market, allowing drop-in substitution within the family while differing datasheet waveform ratings distinguish individual parts. Typical applications include 2 G/3 G cellular base-station driver and final stages, WCDMA/UMTS power amplifiers, PCS repeater outputs, and broadband industrial RF heating. Designers evaluating a single part for entire PA line-ups usually prefer this family because all MRF5S19060 variants share identical matching networks and bias sequencing. For thermal design at 12 W average continuous CW power, a copper spreader that holds case temperature below 100 degrees C is required; the part is not designed for unlimited heatsink-less operation. The MRF5S19060MR1 pinout matches MRF5S19060MBR1 (Class AB vs Class B) and is footprint-identical to other MRF5S WB-4 devices, which simplifies radio maintenance and second-source planning. This page synthesizes distributor pricing, pinout, drop-in alternatives within the MRF5S family, and RF design notes that are not assembled in the manufacturer datasheet, supporting faster replacement and BOM decisions.
MRF5S19060NBR1 - 60W RF Power MOSFET 1930-1990 MHz | NXP
The NXP Semiconductors MRF5S19060NBR1 is an N-Channel Enhancement-Mode Lateral RF Power MOSFET designed for broadband commercial and industrial applications in the 1930 to 1990 MHz band, delivering 12 W average output power (60 W CW / peak) at 28 V from a TO-272 WB-4 over-molded plastic package. The device supplies 14 dB small-signal gain at 1990 MHz and is intended for large-signal, common-source amplifier applications in 28 Volt base station equipment. An RF Power MOSFET is a laterally-diffused metal-oxide-semiconductor field-effect transistor optimized for high-frequency, high-power amplification. In the amplifier taxonomy it sits under RF power transistor -> power MOSFET -> MOSFET -> discrete semiconductor. These devices use a laterally diffused channel to reduce parasitic capacitances, allowing operation at GHz frequencies while still handling tens of watts of continuous RF power. The MRF5S19060N family is part of NXP's classic 28 V base-station driver lineup. Key electrical features include a 28 V typical drain supply, 14 dB power gain at 1.99 GHz, and a thermally-enhanced TO-272 WB-4 overmolded package that lowers thermal resistance compared with earlier ceramic flanges. Two matched die are provided in the single package (2 x N configuration) which simplifies push-pull or parallel-combined amplifier layouts and lets the designer realize wider bandwidths with fewer external matching components. Architecturally the part uses NXP's high-voltage LDMOS process combined with a thermally-conductive plastic overmold and an exposed copper flange. The lateral structure minimizes feedback capacitance and gate-to-drain charge, which is what enables 14 dB of gain and broadband operation in a single-stage final PA. The 28 V bias typical of cellular base-station PAs also simplifies power-supply design in Doherty and class-AB final stages. Typical applications are 1.9 GHz PCS / DCS / DECT base-station final PAs, 1930-1990 MHz industrial RF amplifiers, broadband driver stages for higher-power LDMOS finals, and public-safety / telemetry links requiring 12 W average at 1930-1990 MHz. Designers also use it as a gain block in two-way radio repeaters and laboratory RF power test amplifiers. When designing in this part, follow NXP reference designs for PCB material (typically RO4003 or similar low-loss laminate), apply recommended bias sequencing to avoid thermal runaway, and ensure the copper mounting footprint provides a low thermal-impedance path to the system heatsink. The overmolded package eliminates traditional bolt-down flange mounting, simplifying assembly but requiring careful thermal pad solder processing. This page synthesizes distributor pricing, RF application guidance, and pin-compatible alternatives not found on a single manufacturer or distributor page.
MRF5S19100HR - 100W RF Power MOSFET 1930-1990 MHz | NXP
The NXP Semiconductors MRF5S19100HR is an N-channel enhancement-mode lateral RF power MOSFET designed for PCN and PCS base station applications covering 1930-1990 MHz, capable of delivering 22 W average output power in a 2-carrier N-CDMA configuration from a 28 V supply. The device is housed in the NI-780 ceramic package, the proven NXP RF power ceramic flange-mount format, enabling direct bolted heatsink mounting for high thermal dissipation in macro-cell base-station power amplifiers. RF power MOSFETs are specialized lateral MOSFETs optimized for high-frequency, high-power operation in wireless infrastructure. They serve as the final amplifying stage in Doherty, push-pull, or single-ended PA architectures for cellular base stations, where linearity, gain, and ruggedness under mismatch are critical. The MRF5S19090H and MRF5S19100H family sits in NXP's high-frequency RF power portfolio alongside the MRF6S21100H, MRF6S18100H, and lower-frequency 800-900 MHz MRF5S9080H parts, sharing packaging, biasing concepts, and reference designs. Compared to LDMOS competitor parts, these N-channel enhancement-mode devices offer simplified bias networks and inherent ruggedness into high VSWR loads. Key features include 22 W average two-carrier N-CDMA output power at 1930-1990 MHz, 13.9 dB power gain under CDMA drive, drain efficiency above 30% in two-carrier operation, and integrated ESD protection on the gate. The device accepts a 28 V nominal drain bias with extended operation to 65 V transient on the drain, and is fully characterized for 2-carrier N-CDMA, WCDMA, and multicarrier amplifier (MCPA) drive conditions. The NI-780 ceramic flange package provides gold metallization for high-temperature storage and operates over a -40C to +200C junction temperature range. The MRF5S19100HR uses NXP's high-frequency, high breakdown voltage laterally diffused metal-oxide-semiconductor process. Two die are combined inside the NI-780 package for the 100 W peak power rating. Internal gate-source ESD diodes, integrated input matching networks, and gold bond wires yield stable operation up to 1990 MHz with flat gain and acceptable phase variation across the band. The lateral MOSFET architecture produces low memory effects and clean AM-AM/AM-PM curves required for digital predistortion (DPD) linearization. Typical applications include 1.9-2.0 GHz GSM/EDGE, TDMA, WCDMA, and N-CDMA macro-cell base-station power amplifiers, multicarrier power amplifiers (MCPA) for PCS/PHS/cellular infrastructure, and final-stage driver amplification in higher-power Doherty configurations. The part also sees use in repeater amplifiers, microcell/picocell PA bricks, and laboratory amplifiers covering the full 1900-2000 MHz band. Designers must observe the input matching network layout guidelines in the NXP datasheet (50 ohm microstrip with source-side bias-T or quater-wavelength transformer) and provide at least 100 mm squared of copper heatsinking beneath the NI-780 flange to keep the junction below 200C. Use of WCDMA evaluation fixtures is recommended for prototyping, and the device must be biased in Class-AB with IDQ around 1000 mA for N-CDMA linear operation.
MRF5S19100HR5 - 22W RF LDMOS 1.93-1.99GHz | NXP
The NXP Semiconductors MRF5S19100HR5 is a 22 W RF power LDMOS transistor designed for the 1.93 GHz to 1.99 GHz UMTS/WCDMA and DCS/PCS base-station amplifier bands, housed in a 3-pin NI-780 ceramic flange package. Operating from a 28 V test supply, the device delivers 13.9 dB power gain and 22 W output power at 1.93-1.99 GHz, and is rated for a 65 V maximum drain-to-source voltage. The NI-780 flange package provides a low thermal-resistance path that bolts directly to a heatsink, enabling sustained CW-class operation in Doherty and driver stages. A radio-frequency power MOSFET (RF LDMOS) is a discrete semiconductor device that uses a laterally diffused metal-oxide-semiconductor structure to amplify high-frequency signals in the watt-to-kilowatt range. RF LDMOS transistors sit within the hierarchy: power MOSFET -> RF power transistor -> LDMOS -> semiconductor. They are valued for high gain, high breakdown voltage, and intrinsic thermal stability versus older bipolar RF power transistors, making them the dominant technology for cellular base-station power amplifiers from 700 MHz through 2.7 GHz. Key features include 22 W Pout at 1.93-1.99 GHz, 13.9 dB linear gain at 28 V bias, 65 V drain-source breakdown rating, a thermally efficient NI-780 flange package, and an integrated ESD protection structure. The rugged LDMOS die withstands severe VSWR mismatches, allowing reliable operation into poorly matched antennas without device destruction. The device is suitable for both driver and final-stage amplifier roles in Doherty configurations where high back-off efficiency is required for modern OFDM waveforms. MRF5S19100HR5 is built on NXP's sixth-generation LDMOS process, which combines a high ft with a low-feedback capacitance profile. This architecture yields flat gain across the operating band and simplifies input matching. The lateral structure also produces a positive temperature coefficient that enables safe paralleling of multiple devices in high-power final stages. Typical applications include WCDMA/UMTS base-station power amplifiers, DCS/PCS final stages, industrial RF heating, and driver stages for higher-power Doherty amplifiers. The part was released by Freescale Semiconductor (now NXP) and is widely referenced in legacy 2G-to-3G cellular infrastructure designs. When designing with this part, ensure the heatsink thermal resistance keeps the junction below the 200 C ABS maximum under worst-case load. Bias the gate at the recommended quiescent current, and provide proper sequencing on gate bias to avoid partial turn-on during supply ramps. Maintain good RF layout hygiene to prevent parasitic feedback and load-pull instability. This page combines verified distributor pricing, carefully curated drop-in alternative suggestions, and practical design notes that complement rather than duplicate the information in the manufacturer datasheet.
MRF5S19100HSR5 - 100W RF LDMOS, 1.93-1.99GHz | NXP
The NXP Semiconductors MRF5S19100HSR5 is a 100 W RF power transistor built on NXP's fifth-generation HV5 LDMOS technology, housed in the NI-780S ceramic package. It is designed for continuous-wave and pulsed RF amplification in the 1930 MHz to 1990 MHz band (typical W-CDMA, TD-SCDMA and UMTS base-station downlinks) and delivers 13.9 dB typical power gain at 1.96 GHz from a 28 V supply rail. A RF power LDMOS transistor is a laterally-diffused metal-oxide-semiconductor device optimised for high-frequency, high-power RF amplification. In the transmitter signal chain it sits between the driver stage and the output filter/combiner: it converts DC energy into a large amplified RF waveform, while its LDMOS structure simultaneously supports high drain voltage (here 28 V typical), high breakdown and high efficiency. Within the broader component hierarchy it belongs to discrete semiconductors -> MOSFETs -> RF power MOSFETs -> cellular infrastructure RF transistors. Key RF figures include 22 W typical output power (the part is normally de-rated to ~22 W average for linearity in W-CDMA line-ups), 13.9 dB power gain at 1.96 GHz, and operation from a single 28 V rail with integrated ESD protection. The NI-780S package uses a flanged, ceramic, bolt-down body that screws directly to the heatsink flange, providing the low thermal resistance required for continuous 100 W operation. The device is broadband-matched over the full 1.93-1.99 GHz band so a single part covers the entire UMTS downlink. The internal LDMOS die uses NXP's HV5 enhancement-mode architecture: a p-type channel with an n- epitaxial drift layer provides high breakdown voltage together with low on-resistance, which translates into high drain efficiency (typically 28-32 percent for Class-AB W-CDMA) and excellent thermal stability. Integrated gate-source clamping diodes protect against ESD and inadvertent negative drive, while internal matching networks at the input simplify board-level design. Typical applications include W-CDMA/UMTS base-station power amplifiers (PAs), TD-SCDMA repeaters, GSM/EDGE upgrade paths, multi-carrier driver stages and 1.9 GHz DECT infrastructure. Designers choose this device when continuous-wave or high-duty-cycle linearity matters more than raw pulse power. Designers should provide a minimum heatsink thermal resistance of about 0.3 C/W at the flange and gate-bias the part in Class-AB around 1.5 V above pinch-off for linear W-CDMA operation. Always follow NXP's reference PCB layout and torque the flange to the recommended 2.5 N*m to keep baseplate < 200 C. This page synthesises distributor pricing, NI-780S-package drop-in alternatives, and practical heatsink/gate-bias notes not found in the bare manufacturer datasheet.
MRF5S19130HR3 - 26W RF Power MOSFET 1.93-1.99GHz NI-880 | NXP
The NXP (formerly Freescale) MRF5S19130HR3 is an N-channel enhancement-mode lateral RF power MOSFET designed for PCN and PCS base station applications from 1930 to 1990 MHz, delivering 26 W average output power with 13 dB typical gain at 28 V in the NI-880H ceramic package. It is intended for 2 x N-CDMA driver or final-stage amplifier service in TDMA, CDMA, and multicarrier base-station power amplifiers, and also covers adjacent 1900-2000 MHz infrastructure bands. What is an RF power MOSFET? An RF power MOSFET is a metal-oxide-semiconductor field-effect transistor specifically designed and characterized for high-frequency, high-power amplification rather than for low-frequency switching. It sits at the top of the discrete-semiconductor hierarchy, above small-signal MOSFETs, and is a member of the broader power-transistor family alongside LDMOS, GaN HEMT, and bipolar RF devices. LDMOS in particular dominates cellular base-station PA output stages because it offers high gain, reasonable efficiency, and mature, low-cost silicon fabrication. Key specifications cited by NXP include: 28 V drain supply, 13 dB typical power gain under 2 x N-CDMA drive, 26 W average output power, and a frequency range of 1930-1990 MHz. The lateral N-channel architecture enables high breakdown and broadband RF performance in a hermetic NI-880H ceramic flange package with a metalized ceramic body that bolts directly to a heatsink. The device is rated for 65 V V(DSS) and is built with internal input matching for ease of amplifier design. The MRF5S19130HR3 uses Freescale's (now NXP) 7th-generation or later lateral N-channel LDMOS process, which combines low on-resistance per unit die area with high gain at 2 GHz and good ruggedness into severe output mismatch. The ceramic NI-880H-2L flange package provides a low-inductance common-drain connection via its mounting surface, which is essential for stable operation above 1.5 GHz. Typical applications include PCN/PCS base-station PAs from 1930-1990 MHz, WLL and MMDS transmitters, 2-carrier N-CDMA driver stages, and multicarrier GSM/EDGE amplifier bricks. Designers also use the part in industrial RF heating and laboratory amplifiers that benefit from its 28 V bias and 26 W power rating. When designing with this device, the heatsink flange must be kept below the maximum junction temperature by ensuring adequate airflow or conduction cooling, and the input circuit must present the impedance required by the datasheet's reference layout. Designers should also gate-bias the part with a regulated negative supply to set the quiescent Idq precisely per the recommended bias table. This page synthesizes distributor pricing, drop-in ceramic-package alternatives, and practical design notes not found in the manufacturer datasheet, sourced directly from NXP's MRF5S19130H datasheet and live distributor inventory.
MRF5S19150HSR5 - 32W RF LDMOS Power Transistor 1.93-1.99GHz | NXP
The NXP MRF5S19150HSR5 is a 32 W RF power LDMOS field-effect transistor designed for the 1.93 GHz to 1.99 GHz band, housed in an NI-880S ceramic package and rated for 65 V operation. It is part of NXP's MRF5S19150 family of laterally diffused metal-oxide semiconductor devices engineered for high-efficiency base-station and repeater amplifier stages. The device delivers 14 dB gain at 28 V test conditions while drawing 1.4 A of quiescent bias current. An RF LDMOS transistor is a specialized power MOSFET architecture optimized for radio-frequency power amplification, in contrast to small-signal MOSFETs used for switching and logic. LDMOS devices use a laterally diffused drift region to achieve high breakdown voltage, high output power density, and excellent thermal performance, making them the dominant technology for cellular base-station power amplifiers (PAs) below 3 GHz. They sit within the broader hierarchy of RF power transistors -> power amplifiers -> RF front-end components -> wireless infrastructure. Key features include 32 W CW output power, 14 dB small-signal gain at 1.93 GHz, and a high ruggedness rating that tolerates severe load mismatches. The internally matched input structure simplifies PCB-level integration by reducing external matching component count, while the NI-880S package provides a flange-mount thermal path that enables direct bonding to a heatsink or cold plate. The transistor operates from a 28 V nominal supply with a 65 V absolute maximum drain voltage. The MRF5S19150HSR5 uses NXP's seventh-generation LDMOS process technology, providing high power density per unit gate periphery. This architecture achieves high drain efficiency (>40% typical) and excellent linearity under both CW and W-CDMA modulation, which is critical for modern wireless standards. Internal matching networks reduce external component count and accelerate time-to-market for amplifier module designs. Typical applications include W-CDMA, LTE, and TD-SCDMA base-station power amplifiers, RF repeaters and boosters, and industrial/scientific RF heating at the 1.93-1.99 GHz band. The part also appears in military and commercial telemetry transmitters and high-power CW oscillator stages within that band. When designing with this device, prioritize the thermal interface: the NI-880S ceramic flange MUST be bolted to a heatsink with appropriate thermal compound, and the drain bias feed should be RF-decoupled close to the package lead. Confirm load mismatch tolerance against your antenna VSWR profile. This page synthesizes distributor pricing, drop-in equivalents, application notes, and design considerations that complement, but do not replace, the manufacturer datasheet.
MRF5S21045NBR1 - 10W RF Power LDMOS, 2110-2170 MHz | NXP
The NXP MRF5S21045NBR1 is an N-channel enhancement-mode lateral RF power MOSFET delivering 10 W average output power across the 2110 to 2170 MHz W-CDMA band. Per the NXP datasheet, it operates from a 28 V test supply, draws 500 mA at test, achieves 14.5 dB power gain, and is housed in a TO-272 WB-4 over-molded plastic package rated to 68 V maximum drain-source voltage. An RF power LDMOS (Laterally Diffused MOSFET) is a specialized power transistor designed for radio-frequency amplification. LDMOS sits within the broader power MOSFET family, optimized for high-frequency, high-efficiency linear amplification where standard vertical MOSFETs lose performance. These devices are widely used in cellular infrastructure, broadcast transmitters, and industrial RF heating because they deliver high gain, good linearity, and ruggedness at modest cost. Key features include 14.5 dB typical power gain at 2.12 GHz, a high drain efficiency suited for W-CDMA signal envelopes, integrated ESD protection, and a thermally enhanced ceramic-style over-molded package. The lateral structure minimizes parasitic capacitances, enabling broadband operation while maintaining stable linearity under multicarrier load conditions. Technically, the MRF5S21045NBR1 uses a laterally diffused drain architecture with an internal input matching network that simplifies external circuitry. Per the NXP datasheet, the device is characterized for W-CDMA base station driver and final stages, supports TDMA, CDMA, and multicarrier amplifier applications, and is optimized for Class AB operation in PCN-PCS/cellular radio and wireless local loop (WLL) applications. Typical applications include W-CDMA base station power amplifiers (PA), PCN/PCS cellular infrastructure driver stages, wireless local loop (WLL) transceivers, and multicarrier power amplifier modules used in 3G/4G macrocell radios operating in the 2110-2170 MHz band. When designing with this part, ensure the heatsink thermal resistance keeps the junction below the rated maximum under worst-case multicarrier W-CDMA load. Source matching should follow the evaluation board layout precisely, as the TO-272 WB-4 package is footprint-dependent for stable RF performance. This page synthesizes distributor pricing, drop-in NXP alternates in the same TO-272 WB-4 footprint, and practical heatsink and bias-tee design notes not consolidated in the manufacturer datasheet.
MRF5S21090HR5 - 19W LDMOS RF Power Transistor, 2.11GHz | NXP
The NXP MRF5S21090HR5 is an N-channel enhancement-mode laterally-diffused metal-oxide-semiconductor (LDMOS) RF power transistor designed for high-peak and average-power amplifier stages in 2.11 GHz wireless infrastructure. The device is rated for 28 V operation, delivers 19 W of output power with 14.5 dB gain at 2.11 GHz, and is housed in the NI-780H-2L ceramic package (SOT-957A) with an integrated mounting flange. An LDMOS RF power transistor is a specialized power MOSFET structure optimized for RF amplification rather than switching. The lateral drain structure and thick gate oxide give LDMOS high breakdown voltage, high gain at RF frequencies, and excellent thermal stability, which is why LDMOS dominates the base-station RF power amplifier (PA) market from 1 GHz to 4 GHz. Within the hierarchy, MRF5S21090HR5 belongs to RF power transistor -> RF MOSFET -> discrete semiconductor -> power amplifier building block. Key differentiating features include 14.5 dB small-signal gain at 2.11 GHz under NXP-specified test conditions, a 28 V typical drain bias aligned with standard wireless base-station rails, and the NI-780H-2L flange-mount ceramic package that provides low thermal resistance to the system heatsink. The device is part of NXP's HV5 LDMOS family, which is widely deployed in W-CDMA, LTE, and WiMAX pico-cell and micro-cell PAs where linearity and ruggedness are required. The high drain-to-source breakdown and built-in drain ESD protection support robust Class AB operation. Typical applications include 2.1 GHz UMTS/W-CDMA and LTE small-cell base-station power amplifiers, 2.11 GHz industrial-scientific-medical (ISM) band amplifiers, driver stages for higher-power macro-cell PAs, and avionics/aerospace telemetry links operating near 2.1 GHz. The 19 W P1dB-class output makes it suitable for final-stage or driver use in pico-cell transmitters. When designing with this part, engineers should observe the drain bias sequencing rules of LDMOS (apply gate voltage before drain voltage to avoid parametric drift), maintain the heatsink flatness and torque specified by NXP, and ensure the input/output matching networks target 50 ohms at 2.11 GHz. The flange-mount package requires screw-down mounting with proper thermal interface material for rated power dissipation. This page consolidates NXP datasheet specifications, distributor pricing, drop-in same-package alternatives, and PCB-level design considerations not found in the standalone datasheet.
MRF5S21100HSR3 - 23W RF Power MOSFET, 2110-2170 MHz | NXP
The NXP MRF5S21100HSR3 is an N-channel enhancement-mode lateral RF power MOSFET designed for W-CDMA base station applications in the 2110 MHz to 2170 MHz band, delivering 23 W average output power at 28 V in a NI-780S ceramic package. It operates as a 2-carrier W-CDMA device with 13.5 dB power gain at 2.16 GHz and is internally matched for ease of use, qualifying it for Class AB amplifier service in cellular infrastructure. An RF power MOSFET is a specialized transistor optimized for high-frequency, high-power amplification. Within the broader power semiconductor hierarchy, lateral DMOS (LDMOS) RF MOSFETs sit alongside vertical DMOS, GaN HEMT, and SiC devices as the dominant technology for sub-6 GHz base-station power amplifiers. NXP's fifth-generation MRF5S family targets cellular base-station final stages where linearity, efficiency, and ruggedness outweigh the raw power density of GaN. Compared to bipolar transistors of the same era, lateral MOSFETs offer higher gain-bandwidth product, simpler biasing, and better thermal stability under back-off operation. Key features of the MRF5S21100HSR3 include a maximum drain-source voltage rating of 65 V, characterized series-equivalent large-signal impedance parameters, integrated ESD protection, qualified operation up to 32 V VDD, and a lower thermal resistance NI-780S package with 40 microinches of gold plating. The integrated matching network eliminates the need for external input/output matching on the reference design, accelerating prototyping for W-CDMA, TDMA, CDMA, and multicarrier amplifier applications. Internally the die uses NXP's high-volume 0.4 micrometer LDMOS process on a ceramic-flanged carrier that bolts directly to the system heatsink. The H suffix denotes the lower thermal resistance package versus the L (standard thermal resistance) variant. At 1.05 A quiescent and 23 W Pout with a 28 V rail, typical power-added efficiency is in the high-twenties percent, and the device is rated for the demanding two-carrier W-CDMA linearity mask. Typical applications include W-CDMA base-station final-stage power amplifiers, PCN/PCS/cellular radio Class AB amplifiers, multicarrier driver or output stages, and WLL (wireless local loop) infrastructure. The 2110-2170 MHz band aligns with UMTS Band I, AWS-1 uplink, and several global FDD-LTE allocations, making the part broadly useful across 3G/4G macro-cell designs. When designing with this device, observe the 32 V maximum VDD rating and provide adequate bolt-down torque and thermal interface material to keep the flange below 200 C. The integrated matching simplifies the schematic but does not eliminate the need for a well-designed PCB-to-flange transition, harmonic filtering, and an isolator for VSWR protection. This page synthesizes distributor pricing, drop-in same-package alternatives, and applied design guidance that goes beyond the manufacturer datasheet to support sourcing, replacement, and design-in decisions for cellular RF power stages.
MRF5S21100HSR5 - 23W RF Power MOSFET 2.17GHz NI-780S | NXP
The NXP Semiconductors MRF5S21100HSR5 is an N-channel RF power MOSFET designed for high-frequency amplifier applications in the 2.16 GHz to 2.17 GHz band, delivering 23 W of output power in the NI-780S ceramic package. Operating from a 28 V supply rail, the device is characterized for use in class AB and class C amplifier topologies typical of commercial wireless infrastructure, industrial RF heating, and avionics transponder stages. The part is rated for 1.05 A DC drain current at a 65 V drain-to-source rating and offers 13.5 dB of typical power gain at the rated operating frequency. An RF power MOSFET is a specialized lateral or vertical power field-effect transistor optimized to deliver useful gain and efficiency at radio frequencies above 100 MHz, as opposed to a switching-mode power MOSFET which targets low-frequency power conversion. RF power MOSFETs sit inside the larger hierarchy of power transistors (MOSFET -> FET -> transistor -> discrete semiconductor -> semiconductor) and represent the workhorse device for solid-state RF power generation in the 1 MHz to 3 GHz range, replacing older bipolar power transistors in many applications because of their higher input impedance and easier broadband matching. Key features of the MRF5S21100HSR5 include 23 W CW output power capability, 13.5 dB typical gain at 2.17 GHz from a 28 V supply, a 65 V absolute maximum drain-to-source voltage, integrated ESD protection structure, and a thermally enhanced NI-780S ceramic package with a low thermal-resistance path designed for bolt-down flange mounting to an external heatsink. The device is fabricated on NXP's laterally diffused metal-oxide-semiconductor (LDMOS) process technology which has become the de-facto standard for sub-3 GHz RF power amplification. Typical applications include UMTS and LTE base-station driver stages in the 2.1 GHz downlink band, RFID and industrial-scientific-medical (ISM) band power amplifiers at 2.17 GHz, military and avionics RF links, and pulsed-radar driver amplifiers. The high gain at this frequency allows a single device to deliver the rated 23 W output with relatively low input drive, simplifying the preceding driver chain. When designing with this device, allocate a substantial copper or aluminum heatsink with the lowest practical thermal resistance; the NI-780S package is specifically intended for bolt-down flange mounting rather than PCB-only thermal dissipation. Match the input and output networks to 50 ohms for test, and follow the NXP application-note bias sequencing to prevent thermal runaway during turn-on.
MRF5S21130HSR5 - 28W RF LDMOS 2.11-2.17GHz NI-880S | NXP
The NXP MRF5S21130HSR5 is a 28 W RF power field-effect transistor built on N-channel enhancement-mode Lateral MOSFET (LDMOS) silicon, housed in the NI-880S ceramic package and tape-and-reel qualified to 500-piece reels. It is designed for W-CDMA base station final-stage power amplifiers covering the 2110 MHz to 2170 MHz band, with 13.5 dB typical power gain and rated for 28 V typical operation at a 1.2 A quiescent bias point delivering 28 W CW output. As part of NXP's RF MOSFET Line targeting cellular infrastructure, this part supports TDMA, CDMA, and multi-carrier amplifier (MCPA) applications where linearity and ruggedness are mandatory. LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is the dominant RF power transistor technology for wireless infrastructure base stations. LDMOS devices combine high RF output power, high breakdown voltage, excellent thermal stability, and superior gain at UHF/microwave frequencies compared to earlier bipolar or GaAs alternatives. Within the amplifier hierarchy, LDMOS transistors sit downstream from the modulator/driver and upstream of the output band-pass filter and antenna combiner; their high drain efficiency directly determines the base station's OPEX and thermal design budget. The MRF5S21130HSR5 delivers 13.5 dB typical gain at 2.14 GHz, 28 V VDD, and 1.2 A bias, with 28 W P1dB-class CW output designed for Doherty and push-pull final stages. The device features a gold metallization system for reliability under high thermal cycling, an integrated ESD protection network, and an industry-standard gate bias arrangement compatible with automatic bias controllers. Compared to legacy bipolar parts, the LDMOS die offers higher gain-bandwidth product and reduced memory effects, simplifying DPD (digital pre-distortion) correction in modern linearized transmitters. NXP recommends 28 V operating drain bias to leverage the simultaneous optimum efficiency and gain point; lowering VDD reduces Pout and gain, while raising it risks SOA violation under VSWR mismatch. The part is characterized for W-CDMA, TD-SCDMA, and multi-carrier GSM/EDGE drive signals. Reference designs include symmetrical Doherty PA layouts at 2.14 GHz targeting >40% drain efficiency at 8 dB PAR. Typical applications are W-CDMA / LTE base station final-stage PAs operating in the 2110-2170 MHz downlink band, driver stages for higher-power Doherty amplifiers, and multi-carrier power amplifiers (MCPAs) for sectorized cellular sites. The 13.5 dB gain and 28 W Pout profile suit macro-cell base stations and small-cell remote radio heads requiring surface-mountable ceramic packaging. When designing with this part, follow NXP's recommended gate bias sequencing and use adequate baseplate or PCB copper thermal management; the NI-880S package requires a matched impedance microstrip launch on the drain, gate, and RF output pads. Designers should consult the supplied MRF5S21130 reference design for the bias-T, decoupling, and harmonic filter topology. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the standalone datasheet, helping engineers select, source, and qualify the MRF5S21130HSR5 faster.
MRF5S21150HR3 - 33W 2.11-2.17GHz W-CDMA RF LDMOS | NXP
The NXP (formerly Freescale Semiconductor) MRF5S21150HR3 is a 33 W average output power N-channel enhancement-mode lateral MOSFET (LDMOS) designed for 2110-2170 MHz W-CDMA base-station transmitter power amplifiers, housed in the NI-880 ceramic package (CASE 465B-03, STYLE 1). An RF power transistor is a discrete semiconductor that converts DC power into RF output at microwave or UHF frequencies; the LDMOS family in particular is widely used in cellular infrastructure because of its high gain, high efficiency, and excellent thermal stability. Within the power-management hierarchy the MRF5S21150H sits in the RF Power MOSFET sub-category, and from a system standpoint it is the final amplification stage between the driver amplifier and the antenna-combiner network of a multi-carrier W-CDMA radio unit. Key features include 33 W average output power at 2.17 GHz, 12.5 dB power gain in the W-CDMA band, a 28 V typical drain supply, 1.3 A typical quiescent bias current, and 65 V drain-source breakdown rating per the manufacturer datasheet. The NI-880 ceramic flange package provides a low thermal-resistance path, which is essential for dissipating several hundred watts of waste heat in continuous base-station duty. Architecturally the device is a laterally diffused MOS transistor with two bonding options - the HR3 suffix denotes the standard flange-mount orientation; the HSR3 variant (same datasheet) is the symmetrical bolt-down mirror. The same NXP die is reused across the MRF5S21150 family, sharing the 65 V breakdown and the 12.5 dB W-CDMA gain figure. Typical applications include W-CDMA/UMTS macro-cell base-station power amplifiers, multi-carrier TDMA and CDMA driver stages, PCN/PCS cellular infrastructure, and broadband wireless local-loop front-ends. Class-AB biasing is recommended for linear W-CDMA modulation while preserving efficiency. When laying out a pallet with the MRF5S21150HR3, the input matching network must present the correct load impedance at 2.11-2.17 GHz; mismatch can degrade both gain and ruggedness into a 10:1 VSWR. Adequate base-plate cooling is mandatory because pulsed RF power exceeds the 33 W average figure by 6-9 dB. This page synthesizes distributor pricing, drop-in NI-880 alternatives, and practical thermal/RF design notes not found in a single manufacturer datasheet - it is intended for base-station PA design engineers and procurement specialists.
MRF5S4140HR3 - 465MHz 28V 28W RF Power LDMOS | NXP
The NXP MRF5S4140HR3 is an N-channel enhancement-mode RF power LDMOS transistor designed for 465 MHz single-N-CDMA base-station applications, delivering 28 W average output power at 28 V in a NI-780H-2L flange-mount ceramic package. The device covers the 400-500 MHz UHF band and provides 21 dB gain at 465 MHz, with a 1.25 A typical DC bias current and 65 V drain-source rating suitable for 28 V supply rails. The lateral MOSFET architecture and broadband matching network make the part well-suited for large-signal, common-source amplifier designs in industrial and commercial RF infrastructure. An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) transistor is a specialized power MOSFET optimized for high-frequency, high-power amplification. It is a subset of the broader discrete power MOSFET family and is widely used as the final-stage or driver amplifier in wireless base stations, broadcast transmitters, and industrial RF generators. LDMOS devices combine the high breakdown voltage and thermal robustness of bipolar transistors with the switching simplicity of MOSFETs, and they dominate cellular and UHF base-station amplifier stages because of their high gain, high efficiency, and broadband RF characteristics. The MRF5S4140HR3 key parameters include 28 W typical output power, 21 dB power gain, 28 V typical operating drain voltage, 65 V maximum drain-source rating, and operation across 400-500 MHz. The lateral structure provides excellent thermal stability and broadband input/output matching, while the NI-780H ceramic flange package offers low thermal resistance and straightforward bolt-down heatsinking for high-duty-cycle base-station operation. Internal electrostatic discharge (ESD) protection and stable gain across frequency simplify board-level design. Architecturally, the MRF5S4140HR3 uses a laterally diffused MOS channel with a heavily doped drain region for high breakdown voltage and low on-resistance. The internal matching networks are pre-tuned for the 400-500 MHz band, and the device exhibits high power-added efficiency when operated in Class AB bias. Designers should observe the manufacturer-recommended bias sequence (gate-before-drain) and use gate-source pull-down resistors for safe shutdown. Typical applications include 450 MHz CDMA, TDMA, and LTE private-network base-station amplifiers, UHF broadcast transmitters, industrial RF heating, and amateur radio amplifiers. The 28 W average power level is well matched to single-sector or repeater-station PA designs. When designing with this part, provide a low-inductance ground path through the flange mounting surface and adequate copper heat-spreading beneath the PCB. Operate within the device's safe operating area envelope and follow the manufacturer bias and sequencing guidelines to prevent in-rush currents that could damage the gate oxide. This page synthesizes distributor availability, drop-in alternatives in the same NI-780 family, and practical design notes that are not consolidated on the manufacturer datasheet alone.
MRF5S4140HR5 - 28V, 28W RF Power MOSFET 465MHz | NXP
The NXP MRF5S4140HR5 is an N-channel enhancement-mode lateral RF power MOSFET designed for high-frequency, large-signal common-source amplifier applications from 400 MHz to 500 MHz. It delivers 28 W of continuous output power at 28 V supply, with a typical power gain of 21 dB at 465 MHz and a drain efficiency tuned for class-AB operation. The device is housed in the NI-780H-2L (2-lead ceramic flange) package, the de facto industry standard for base-station RF power transistors. A power MOSFET is a metal-oxide-semiconductor field-effect transistor specifically engineered to handle high current and high voltage in switching or RF amplification roles. Within the taxonomy, the MRF5S4140HR5 sits under RF power MOSFET -> power MOSFET -> discrete semiconductor. RF power MOSFETs are optimized for low parasitic capacitance and high transition frequency (fT), enabling efficient amplification at VHF/UHF frequencies where conventional low-frequency MOSFETs suffer severe gain roll-off. Key specifications include a 65 V drain-source breakdown voltage (V(BR)DSS), a 1.25 A maximum DC drain current, and a 28 V typical operating drain supply. The high gain (21 dB at 465 MHz) reduces the required driver stages in a typical transmit chain, while the broadband input matching capability covers the entire 400-500 MHz commercial and industrial band. Integrated ESD protection and a thermally enhanced ceramic flange package support reliable operation in base-station equipment. Architecturally, the device uses NXP's laterally diffused MOS (LDMOS) process technology, which is the dominant RF power transistor technology for sub-6 GHz applications due to its high gain, high breakdown voltage, and excellent thermal conductivity on a ceramic flange. The device is characterized for class-AB operation with appropriate matching networks. Typical applications include UHF base-station power amplifiers operating in the 400-500 MHz commercial and industrial frequency band, land mobile radio repeaters, public-safety transmitters, and broadband industrial RF generators. Designers should bias the gate between 2.5 V and 4.0 V for class-AB operation and use an RF-grade heat sink bolted to the ceramic flange for sustained thermal management.
MRF5S9100NR1 - 880MHz N-CDMA 20W RF Power LDMOS | NXP
The NXP MRF5S9100NR1 is an N-channel enhancement-mode lateral MOSFET designed as a single N-CDMA RF power transistor optimized for 880 MHz base-station applications. It delivers 20 W of output power with 19.5 dB power gain when tested at 26 V with 950 mA quiescent bias, in the TO-270 WB-4 over-molded plastic package rated to 68 V drain breakdown. A RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is a specialized power MOSFET architecture designed for high-frequency, high-power amplification. Unlike standard power MOSFETs, LDMOS integrates the source connections through the silicon substrate, reducing parasitic inductance and enabling multi-MHz to multi-GHz operation. Within the broader taxonomy, this part sits at: RF power transistor -> RF power MOSFET -> LDMOS -> discrete semiconductor -> electronic component. LDMOS has become the dominant technology for cellular base-station power amplifiers from 700 MHz through 2.7 GHz because it offers excellent gain, broadband performance, and superior thermal ruggedness compared to older bipolar junction transistor (BJT) solutions. Key features of the MRF5S9100NR1 include 19.5 dB typical power gain at 880 MHz, broadband response covering up to 1000 MHz, integrated ESD protection, and a thermally enhanced TO-270-4 ceramic-look plastic over-mold package with a flanged lead for bolt-down mounting and direct-to-heat-sink thermal transfer. The device is rated for 68 V drain-source breakdown with a 26 V typical operating supply. The MRF5S9100NR1 uses Freescale/NXP's 6th-generation (HV6) LDMOS process, providing high breakdown, low feedback capacitance, and built-in gate-source protection diodes. The lateral structure delivers stable common-source amplifier behavior, which simplifies PCB matching-network design at 800-1000 MHz and supports N-CDMA, W-CDMA, and OFDM modulation formats with adjacent-channel-leakage-ratio (ACLR) performance suited to 3G and pre-LTE base-station hardware. Typical applications include 880 MHz N-CDMA cellular base-station power amplifiers, GSM/EDGE driver or final-stage amplifiers, industrial RF heating, RFID interrogators, and paging transmitters operating in the 900 MHz ISM band. Its broadband capability also makes it useful as a generic 800-1000 MHz power block for laboratory amplifiers and instrumentation. When designing with this part, ensure the drain supply is well decoupled at the device flange and that the lead-to-flange grounding path is solid. The TO-270-4 package must be bolted to a heat sink with proper thermal compound; the silicon reaches full rated power only when the case-to-sink thermal resistance is minimized. Input and output matching networks should be designed on low-loss substrates such as RO4350B for best efficiency at 880 MHz. This page synthesizes distributor stock, lead time, drop-in cross-references including MRF5S9100NBR1, and practical RF PCB layout guidance that the manufacturer datasheet alone does not consolidate.
MRF5S9101MBR1 - 100W 869-960MHz LDMOS RF MOSFET | NXP
The NXP (formerly Freescale) MRF5S9101MBR1 is an N-channel enhancement-mode lateral MOSFET (LDMOS) designed for GSM and GSM EDGE base station RF power amplifier applications, delivering 100 W of output power across the 869-960 MHz band with 17.5 dB gain and tested at 26 V / 700 mA. Housed in the TO-272 WB-4 over-molded plastic package, this 50-volt-rated device supports base station and multicarrier amplifier architectures where high gain, robust thermal performance, and broadband linearity are required. What is an LDMOS RF MOSFET? An LDMOS (Laterally Diffused Metal-Oxide Semiconductor) RF power transistor is a specialized power MOSFET optimized for high-frequency RF amplification. Within the hierarchy of discrete semiconductors, LDMOS belongs to MOSFETs > transistors > discrete semiconductors. Unlike silicon bipolar junction transistors, LDMOS devices offer higher gain, better thermal stability, and superior ruggedness under mismatch conditions, making them the dominant technology for cellular base station power amplifiers from 700 MHz through 2.7 GHz. Key features include a minimum power gain of 17.5 dB at 960 MHz, a maximum drain-source voltage rating of 68 V with a 26 V typical operating test condition, and a single-ended common-source configuration optimized for class AB operation. The lateral structure ensures excellent thermal coupling to the source leads, which serve as the primary heat-dissipation path to the PCB ground plane. Technically, the MRF5S9101MBR1 employs NXP's industry-proven LDMOS VII process family, providing high breakdown voltage, low output capacitance, and integrated ESD protection. The device's high gain reduces the number of driver stages required in multi-stage PA lineups, lowering overall BOM cost and PCB footprint. The 100 W CW rating makes it equally suitable for pulsed radar and continuous-wave commercial wireless infrastructure. Typical applications include GSM and GSM EDGE base station power amplifiers, 900 MHz multicarrier amplifier modules, RFID reader transmitters, industrial RF heating sources, and pulsed RF generators. The 869-960 MHz band matches global cellular uplink allocations including GSM900, LTE Band 8 uplink, and certain ISM-band applications. When designing with this device, ensure the PCB ground plane provides a low-inductance thermal path to the source leads, and use a sufficiently rated drain bias supply with proper sequencing to prevent in-rush damage. Always operate within the SOA envelope at the published test bias of 26 V / 700 mA. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes not found in the manufacturer datasheet alone, including cross-brand equivalents and PCB thermal guidance verified against NXP application notes.
MRF5S9101MR1 - 100W 869-960MHz RF Power LDMOS | NXP
The NXP MRF5S9101MR1 is a 100 W RF Power Field Effect Transistor built on N-channel enhancement-mode Lateral MOSFET (LDMOS) technology, optimized for GSM and GSM EDGE base station applications across 869 to 960 MHz. It is supplied in the TO-270 WB-4 (Case 1486-03, Style 1) plastic package and operates from a 26 V test supply while delivering 17.5 dB power gain and 100 W continuous-wave output power. A Radio Frequency power transistor is a specialized discrete semiconductor designed to amplify high-frequency signals with substantial output power while maintaining acceptable efficiency and linearity. These devices sit at the final stage of a transmitter chain, immediately before the antenna or filter network, and belong to the broader category of power amplifiers. Within that taxonomy, LDMOS is the dominant silicon technology for sub-3 GHz base-station transmitters because it offers higher gain, better ruggedness, and lower cost-per-watt than competing GaAs or SiGe solutions. Key specifications of the MRF5S9101MR1 include 17.5 dB power gain measured at 960 MHz / 26 V / 700 mA, a 68 V maximum drain-source voltage rating, 100 W POUT, and 700 mA quiescent test current. The device is rated for 26 V operation and is characterized for both pulsed and CW waveforms in single-carrier and multi-carrier amplifier (MCPA) topologies. The TO-270 WB-4 flange package provides a low thermal-resistance path to the heatsink, enabling continuous operation at full rated output with a conventional extruded aluminum fin. The MRF5S9101MR1 uses NXP's fifth-generation high-voltage LDMOS process, which integrates an anti-static gate protection network and a thermally matched lead frame. This architecture offers improved thermal conductivity versus earlier MRF5-series packages and supports the high peak-to-average ratios of EDGE and multi-carrier waveforms. The device is also internally matched for input impedance at 900 MHz, simplifying board-level integration with standard microstrip or stripline balun networks. Typical applications include GSM 900, GSM EDGE 900, and N-CDMA base-station power amplifiers operating in the 869-960 MHz cellular band, as well as multi-carrier amplifier (MCPA) modules, repeaters, and industrial RF heating sub-assemblies. Designers pair the transistor with an NXP or third-driver LDMOS stage (for example MRF5S2100 or similar drivers) to assemble the full RF chain. When designing with the MRF5S9101MR1, ensure the heatsink compound interface has a thermal resistance below 0.3 C/W and the supply rail includes sufficient bulk capacitance to support peak pulsed current without voltage collapse. The lead-free MRF5S9101NR1/NBR1 variant is form, fit, and function equivalent and replaces the MR1 part where Pb-free assembly is required. This page consolidates distributor pricing, parameter comparison, drop-in alternatives, and practical RF design guidance not found in the manufacturer datasheet alone.
MRF5S9101NR1 - 100W, 869-960MHz RF Power LDMOS | NXP Semiconductors
The NXP Semiconductors MRF5S9101NR1 is a 100 W, 26 V lateral N-channel RF power MOSFET designed for GSM and GSM EDGE base station applications covering 869–960 MHz, housed in a TO-270 WB-4 (CASE 1486-03) plastic overmolded package. It delivers 17.5 dB typical gain, 100 W P1dB-class output power, and is suitable for multicarrier amplifier (MCPA) architectures used in cellular infrastructure. A lateral N-channel enhancement-mode MOSFET (LDMOS) is a power transistor structure optimized for RF amplification at VHF/UHF frequencies. Unlike vertical MOSFETs, the LDMOS architecture places the source, channel, drain, and drift region laterally on the silicon die, enabling high breakdown voltage, low output capacitance, and excellent thermal stability. LDMOS belongs to the broader hierarchy RF power transistor → power MOSFET → discrete semiconductor, and is the dominant technology in cellular base station PA design from 700 MHz through 2.6 GHz. The MRF5S9101NR1 features high gain (17.5 dB at 960 MHz), broadband performance across the 869–960 MHz cellular sub-bands, and a 26 V nominal drain supply with 68 V breakdown rating. It is rated for 100 W continuous-wave output power and is designed to withstand the high VSWR loads typical of base station antennas. The lead-free overmolded plastic package simplifies board-level integration and improves long-term reliability in outdoor base station environments. Typical applications include GSM and GSM EDGE macro-cell base station power amplifiers, multicarrier amplifier (MCPA) lineups, and industrial/scientific RF generators in the 900 MHz band. It is also used in push-pull or Doherty amplifier configurations where its high gain simplifies driver-stage design and reduces overall BOM cost. Designers should observe the 26 V maximum drain voltage and provide adequate heatsinking to keep junction temperature within the 200 °C limit. The TO-270 WB-4 flange-mount package requires through-board or chassis-mount heatsinking; thermal vias alone are insufficient for 100 W continuous dissipation.
MRF5S9150HR5 - 880MHz 33W RF Power LDMOS | NXP
The NXP (formerly Freescale Semiconductor) MRF5S9150HR5 is a 33 W RF power LDMOS transistor designed for UHF-band wireless infrastructure, optimized for operation at 880 MHz with a 28 V supply rail. Housed in the NI-780H-2L ceramic flange package, it delivers 19.7 dB power gain at 1.5 A quiescent bias while sustaining 68 V drain breakdown voltage for rugged transmitter operation. The device is part of NXP's MRF5S9000 series of high-voltage laterally-diffused MOSFETs built for digital and analog broadcast, two-way radio, and industrial RF power applications in the 700-1000 MHz band. An RF power LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is a type of power MOSFET that has become the dominant transistor technology for high-frequency, high-power RF amplification. LDMOS devices combine a lateral current path with a lightly-doped drift region, which raises the breakdown voltage while preserving excellent high-frequency gain. Within the broader semiconductor taxonomy, LDMOS sits under RF power transistor -> power MOSFET -> discrete semiconductor, and it specifically displaced older bipolar and Si LDMOS solutions in cellular base-station amplifiers because of its high gain, broad bandwidth, and simplified bias requirements. Key differentiating features include a typical power gain of 19.7 dB at 880 MHz, 33 W CW output power capability, integrated electrostatic discharge (ESD) protection, and an internal input matching network that simplifies PCB design. The NI-780H-2L ceramic package provides a low thermal resistance path, enabling continuous-wave operation at full output power with appropriate heatsinking. Two flange-through mounting holes allow direct bolting to a copper spreader or heatsink for chassis-mounted amplifier designs. The MRF5S9150HR5 uses NXP's HV5 (high-voltage fifth generation) LDMOS process, which targets higher breakdown voltage (68 V) than competing 50 V RF MOSFETs. This additional voltage margin permits higher load VSWR tolerance, simplifies bias network design, and improves reliability under output mismatch conditions commonly encountered in broadcast amplifiers and RF generators. Typical applications include 900 MHz digital and analog radio links, GSM base-station power amplifiers, RFID readers, industrial RF heating, UHF TV transmitters, and avionics telemetry. The 880 MHz tuning point makes it particularly well suited to cellular bands below 1 GHz and to licensed UHF industrial/scientific/medical (ISM) systems. Designers should note that thermal management is critical: at 33 W CW output into a mismatched load, drain efficiency must be considered and a substantial copper spreader or forced-air cooling is recommended. The integrated ESD protection eliminates the need for external Zener clamps at the gate, simplifying PCB layout. This page synthesizes distributor pricing, drop-in alternatives, and practical design notes that are not consolidated on a single manufacturer datasheet, providing engineers with the cross-reference and selection information needed for sourcing and second-source decisions.
MRF6P18190HR6 - 1.88GHz 44W RF Power MOSFET | NXP
The NXP MRF6P18190HR6 is a 1.88 GHz RF Power Field Effect Transistor (N-Channel Enhancement-Mode Lateral MOSFET) rated at 44 W average output power from a 28 V supply, housed in the NI-1230 ceramic package. It delivers approximately 15.9 dB power gain across the 1805-1880 MHz band and is specifically optimized for 2-carrier W-CDMA base-station amplifier applications, with documented use also in TDMA, CDMA, and multi-carrier amplifier lineups. Heisener reports distributor inventory of 12,072 pieces as of the current date. What is an RF power MOSFET? An RF power MOSFET is a metal-oxide-semiconductor field-effect transistor optimized to deliver high output power at radio frequencies. It belongs to the broader taxonomy of discrete semiconductors -> power transistors -> RF transistors -> lateral N-channel MOSFETs -> W-CDMA base-station PAs. Lateral MOSFET geometries keep drain-to-source capacitance low and support high transition frequencies, making them the dominant architecture for cellular base-station power amplifiers from 700 MHz to 3 GHz. Key features include 44 W typical average output power under 2-carrier W-CDMA excitation, 15.9 dB power gain at 1.88 GHz, 28 V drain bias for class-AB efficiency, and a Ni-1230 ceramic- flange package that screws directly to a heatsink for thermal management. The 1.88 GHz tuned band makes the device a direct fit for the DCS-1800 / PCS-1900 uplink, IMT-2000, WLL, and PCN segments historically served by the NXP/Freescale MRF6 family. Technically, the part uses NXP's later-generation high-frequency process to achieve simultaneously high gain and ruggedness against 10:1 VSWR mismatch. The NI-1230 package has two bolt-down leads plus a flanged ceramic body that also serves as the drain/thermal pad, simplifying board layout in Doherty and class-AB implementations. Typical applications include W-CDMA 2-carrier base station power amplifiers (1805-1880 MHz), TDMA and CDMA driver stages, multicarrier amplifier MCPA modules, and cellular/DCS infrastructure power stages rated from 27 to 32 V rail. The device is class-AB biased, so a bias-sequencer and a circulator/isolator are typically used on the RF path. When designing in the MRF6P18190HR6, place 50 Ω microstrip transforms at both gates and drains, ensure the heatsink flange mounting torque meets the datasheet recommendation, and add gate-source protection zener/ESD diodes because the lateral gate oxide is sensitive to overvoltage. This page synthesizes distributor pricing and stock, drop-in pin-compatible alternatives, and practical RF PA design notes that complement the manufacturer datasheet.
MRF6P21190HR5 - 44W LDMOS RF Power Transistor 2.12GHz | NXP
NXP Semiconductors MRF6P21190HR5 is an N-channel LDMOS RF power transistor delivering 44 W of output power at 2.12 GHz from a 28 V supply, housed in the NI-1230 ceramic package. Designed for high-peak-to-average (W-CDMA, LTE, multi-carrier) base-station driver and final-stage amplifier applications, the device provides 15.5 dB of power gain, typically 33% drain efficiency, and is characterized for operation from 1930 MHz to 2120 MHz. The LDMOS (Laterally Diffused Metal-Oxide Semiconductor) is a category of RF power transistor that builds on silicon CMOS processing but adds a lightly doped drift region between the channel and the drain. This drift region sustains high breakdown voltage (rated to 68 V on the MRF6P family) while preserving a short channel for high ft, allowing the device to deliver tens of watts at GHz frequencies. LDMOS sits inside the broader RF power hierarchy: RF MOSFET -> RF power transistor -> RF semiconductor -> discrete semiconductor. Compared with silicon bipolar and SiC/GaN HEMT alternatives, LDMOS remains the dominant technology for sub-3 GHz macro-cell base-station PAs due to its mature supply chain and favorable linearity-versus-cost trade-off. Key features of this MRF6P21190HR5 include a 1.9 A quiescent drain current at 28 V test, integrated ESD protection, internal input matching for broadband operation across the 1930-2120 MHz wireless band, and an NI-1230 bolt-down ceramic flange that provides a low thermal resistance path to the system heatsink. The ceramic package supports gold-plated leads for lead-free reflow-compatible mounting on PCBs and direct chassis mounting with screws and indium or thermal grease for heat extraction. Typical applications include W-CDMA, LTE-FDD, and TD-SCDMA driver or final PAs in macro-cell base stations, repeater amplifiers, and high-power broadband industrial/scientific RF generators. The wide 28 V operation and high gain also suit the device for Doherty PA final stages where efficiency must be maximized at 6-9 dB output back-off. When designing with this LDMOS transistor, careful attention to the PCB layout, lead inductance, and the heatsink interface thermal resistance is mandatory because internal dissipation can exceed 90 W at P3dB. Designers must also provide sequence-correct gate bias (negative Vgg first, then Vdd) to prevent thermal breakdown during turn-on transient. This page synthesizes distributor inventory, parametric comparison with sibling and competitor RF MOSFETs, and practical thermal/PCB layout guidance beyond what the manufacturer datasheet alone provides.
MRF6P23190HR5 - 40W RF Power MOSFET, 2.3GHz, NI-1230 | NXP
The NXP (formerly Freescale) MRF6P23190HR5 is a 40 W RF power MOSFET designed for high-performance wireless infrastructure amplification. Per the verified distributor data, the device operates from a 28 V drain supply, delivers 1.9 A of quiescent bias, and produces 14 dB of small-signal gain at 2.39 GHz, all housed in the NI-1230 ceramic-flange power package. The part is the fifth-suffix (-R5) tape-and-reel variant of the MRF6P23190HR family optimized for 2300-2400 MHz WiMAX, LTE, and point-to-point radio links. RF power MOSFETs are specialized laterally-diffused metal-oxide-semiconductor (LDMOS) transistors engineered to deliver high continuous-wave (CW) and pulsed RF output power at frequencies from HF through 3.8 GHz. They sit within the power MOSFET and discrete RF transistor taxonomy: power MOSFET -> RF MOSFET -> LDMOS RF power transistor -> discrete semiconductor. Compared to GaN-on-SiC devices, LDMOS parts retain cost, linearity, and ease-of-bias advantages at sub-3 GHz, which is why NXP, Ampleon, and Qorvo continue to ship millions of LDMOS transistors annually for cellular and industrial RF systems. The key datasheet specifications of 28 V VDD, 14 dB gain at 2.39 GHz, 1.9 A bias, and 40 W Pout place this transistor in the mid-power segment used for driver or pre-driver stages of base-station power amplifiers. The 14 dB gain reduces the number of gain stages required in a typical line-up, simplifying the bill of materials. The NI-1230 package is a ceramic-flanged through-hole design that bolts directly to a heatsink, providing the low thermal resistance needed to dissipate the dozens of watts produced during normal operation. According to the verified distributor listings, the device supports tape-and-reel packaging and is qualified for high-volume manufacturing. Architecturally, MRF6P23190HR5 uses NXP's later-generation LDMOS die with a high-resistivity silicon substrate that minimizes drain-source capacitance (Coss) and improves broadband efficiency. Internal gate-source matching is integrated to flatten gain across the 2300-2400 MHz band, eliminating the need for an external input matching network in many reference designs. Typical applications include 2.3-2.4 GHz WiMAX base-station power amplifiers, LTE band 40 TDD radio units, point-to-point microwave backhaul transmitters, military communications jamming-resistant radios, and industrial RF heating. The high gain (14 dB) makes it particularly attractive for designs targeting adjacent-channel leakage ratio (ACLR) compliance with fewer gain blocks in the lineup. When designing with this part, attention must be paid to the gate-bias network stability and heatsink mounting torque. The NI-1230 flange requires a flat, thermally-conductive mounting surface with proper RF grounding to prevent common-mode instability and ensure the device meets its rated efficiency. This page consolidates distributor pricing, drop-in alternatives, and engineering design notes derived from the manufacturer datasheet and verified web sources, providing information not found on any single distributor listing.
MRF6P24190HR6 - 190W 2.45GHz RF Power MOSFET | NXP
The NXP Semiconductors MRF6P24190HR6 is a 190 W CW lateral N-channel RF power MOSFET designed for large-signal output amplifier stages at 2450 MHz, operating from a 28 V supply rail and housed in the NI-1230 ceramic package (Case 375D-05, Style 1). The device delivers 14 dB typical gain at 2.39 GHz under CW operation and is fabricated using NXP's HV6 lateral MOSFET process, which combines high breakdown voltage with low parasitic capacitance to support industrial, medical, and scientific RF power applications. What is an RF Power MOSFET? An RF power MOSFET is a specialized metal-oxide-semiconductor field-effect transistor optimized to deliver high RF output power at frequencies typically ranging from HF through microwave bands. Within the broader semiconductor taxonomy, RF power MOSFETs sit under discrete transistors, alongside LDOs in linear regulators and IGBTs in high-current switching, but they are distinguished by their ability to handle tens to hundreds of watts of continuous RF power. The HV6 family is NXP's sixth-generation laterally-diffused MOSFET (LDMOS) platform; HV6 devices superseded the earlier HV5 line with improved power density, higher efficiency, and extended bandwidth at frequencies up to 2.7 GHz. Key specifications include a maximum drain-source voltage (VDS) of 68 V, a continuous drain current rating of 1.9 A pulsed, and a maximum power dissipation of 250 W. The MRF6P24190HR6 is rated for CW (continuous wave) operation at 2450 MHz and produces up to 40 W at 2.39 GHz per the distributor listing, while the broader family achieves 190 W Pout at the same band. The NI-1230 ceramic bolt-down package provides low thermal resistance suitable for baseplate-cooled amplifier designs where the device flange is mounted directly to a heatsink or cold plate. Typical applications for the MRF6P24190HR6 include industrial heating systems at 2.45 GHz, microwave ovens, medical diathermy and hyperthermia equipment, scientific particle accelerators, and RF plasma generators. Designers choose this part for its high gain and high power in a compact ceramic package, accepting the discrete transistor footprint in exchange for ease of impedance matching at the target frequency band. A critical design consideration is thermal management: at full 190 W output the device dissipates significant waste heat, so the NI-1230 flange must be mounted to a heatsink with thermal compound. Impedance matching networks on both input and output must be tuned for 2.4 to 2.5 GHz to realize the rated gain. This page synthesizes distributor pricing, parametric comparisons, and application context not found in the manufacturer datasheet alone, complementing NXP's official document.