IPB110P06LMATMA1 vs IPB051N15NM6ATMA1 Vergleich
Detaillierter Direktvergleich von IPB110P06LMATMA1 von Infineon und IPB051N15NM6ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPB051N15NM6ATMA1 - 150V 5.1mOhm OptiMOS 6 N-Channel MOSFET | Infineon
IPB051N15NM6ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPB110P06LMATMA1 | IPB051N15NM6ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $1,31 | $2,02 |
| FET Type | P-Channel | N-Channel |
| Technology | OptiMOS (trench MOSFET) | — |
| Drain-Source Voltage (VDS) | -60 V | 150 V |
| Continuous Drain Current (ID) at TC=25C | -100 A | 139 A |
| Maximum Power Dissipation (PD) at TC=25C | 300 W | — |
| On-State Resistance (RDS(on) max) at VGS=10V | 11 mOhm @ ID=100A | — |
| Gate Threshold Voltage (VGS(th) max) | 2 V @ ID=5.55 mA | — |
| Gate-Source Voltage (VGS max) | +/-20 V | — |
| Betriebstemperaturbereich | -55 C to +175 C (TJ) | -55C to +175C |
| Gehäuse / Bauform | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) | PG-TO263-3-2 (D2PAK) |
| Montageart | Surface Mount | Surface Mount |
| Supplier Device Package | PG-TO263-3-2 | — |
| Gate Drive Level | Logic-level compatible | — |
| RoHS-Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 6 |
| Continuous Drain Current (ID) at TA=25C | — | 18 A |
| RDS(on) Typical at VGS=10 V | — | 5.1 mOhm |
| Gate Charge (Qg) Typical | — | 51 nC |
| Gate-Source Threshold Voltage (VGS(th)) | — | [DATA_NEEDED: VGS(th) typical value] |
| Power Dissipation (PD) at TA=25C | — | 3.8 W |
| Power Dissipation (PD) at TC=25C | — | 234 W |
| Pin-Anzahl | — | 3 (Drain, Source, Gate) |
| MSL-Level | — | 1 (per JEDEC J-STD-020) |
| Avalanche Rated | — | Yes |