IPB110P06LMATMA1 vs IPB051N15NM6ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IPB110P06LMATMA1 sa pamamagitan ng Infineon at IPB051N15NM6ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IPB110P06LMATMA1 IPB110P06LMATMA1 - P-Ch 60V 100A OptiMOS MOSFET | Infineon

IPB110P06LMATMA1 - P-Ch 60V 100A OptiMOS MOSFET | Infineon

IPB110P06LMATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IPB110P06LMATMA1 IPB051N15NM6ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type P-Channel N-Channel
Technology OptiMOS (trench MOSFET) —
Drain-Source Voltage (VDS) -60 V 150 V
Continuous Drain Current (ID) at TC=25C -100 A 139 A
Maximum Power Dissipation (PD) at TC=25C 300 W —
On-State Resistance (RDS(on) max) at VGS=10V 11 mOhm @ ID=100A —
Gate Threshold Voltage (VGS(th) max) 2 V @ ID=5.55 mA —
Gate-Source Voltage (VGS max) +/-20 V —
Hanay ng Temperature na Operasyon -55 C to +175 C (TJ) -55C to +175C
Packhaging / Kaso PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) PG-TO263-3-2 (D2PAK)
Uri ng Pagpapasok Surface Mount Surface Mount
Supplier Device Package PG-TO263-3-2 —
Gate Drive Level Logic-level compatible —
Tindminan RoHS Compliant Compliant
Lead-Free Yes —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 6
Continuous Drain Current (ID) at TA=25C — 18 A
RDS(on) Typical at VGS=10 V — 5.1 mOhm
Gate Charge (Qg) Typical — 51 nC
Gate-Source Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical value]
Power Dissipation (PD) at TA=25C — 3.8 W
Power Dissipation (PD) at TC=25C — 234 W
Bilang ng Pin — 3 (Drain, Source, Gate)
Level ng MSL — 1 (per JEDEC J-STD-020)
Avalanche Rated — Yes

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