IPD60R600PFD7SAUMA1 vs IPD60R1K0PFD7SAUMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPD60R600PFD7SAUMA1 disebabkan oleh Infineon dan IPD60R1K0PFD7SAUMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Infineon
IPD60R1K0PFD7SAUMA1 IPD60R1K0PFD7SAUMA1 - 600V 1Ω CoolMOS PFD7 | Infineon | DPAK

IPD60R1K0PFD7SAUMA1 - 600V 1Ω CoolMOS PFD7 | Infineon | DPAK

IPD60R1K0PFD7SAUMA1 ✓ Aktif

Pengandingan Spesifikasi

Parametr IPD60R600PFD7SAUMA1 IPD60R1K0PFD7SAUMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series CoolMOS PFD7 CoolMOS PFD7 consumer / superjunction
Jenis Transistor N-Channel MOSFET —
Technology Superjunction (CoolMOS) CoolMOS PFD7 Superjunction (SJ) MOSFET
Drain-Source Voltage (V_DS) 600 V —
Continuous Drain Current (I_D) 6 A (Tc) —
R_DS(on) Max 600 mΩ @ V_GS = 10 V, I_D = 1.7 A —
Total Gate Charge (Q_g) 8.5 nC —
Output Capacitance (C_oss) 8 pF @ 400 V —
Power Dissipation (P_D) 31 W (Tc) —
Gate Threshold Voltage (V_GS(th)) 3.5 V (typ) —
Kemasan PG-TO252-3 (DPAK) PG-TO252-3 (DPAK, 2 leads + tab, SC-63)
Jenis Pemasangan Surface Mount Surface Mount
Suhu Operasi -55°C to +150°C (Tj) —
Aras MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant Compliant
Reel Quantity 2500 —
Polarity / Channel Type — N-Channel Enhancement Mode
Drain-Source Voltage (VDS) — 600 V
Continuous Drain Current (ID) at TC — 4.7 A
Power Dissipation (PD) at TC — 26 W
Drain-Source On-Resistance (RDS(on)) — 1 Ω @ VGS=10V
Gate Threshold Voltage (VGS(th)) — ±20 V (max gate-source)
Gate Charge (QG) — 6 nC @ VGS=10V
Output Capacitance (Coss) — 230 pF @ 400 V
Gambaran Suhu Operasi — -55C to +150C (TJ)
Gate Drive Voltage (recommended) — 10 V (full enhancement)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga