IPD60R600PFD7SAUMA1 vs IPD60R1K0PFD7SAUMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IPD60R600PFD7SAUMA1 sa pamamagitan ng Infineon at IPD60R1K0PFD7SAUMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IPD60R600PFD7SAUMA1 - 600V 6A 600mΩ CoolMOS PFD7 MOSFET | Infineon
IPD60R600PFD7SAUMA1 ✓ NakahandaInfineon
IPD60R1K0PFD7SAUMA1 - 600V 1Ω CoolMOS PFD7 | Infineon | DPAK
IPD60R1K0PFD7SAUMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IPD60R600PFD7SAUMA1 | IPD60R1K0PFD7SAUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | — |
| Series | CoolMOS PFD7 | CoolMOS PFD7 consumer / superjunction |
| Uri ng Transistor | N-Channel MOSFET | — |
| Technology | Superjunction (CoolMOS) | CoolMOS PFD7 Superjunction (SJ) MOSFET |
| Drain-Source Voltage (V_DS) | 600 V | — |
| Continuous Drain Current (I_D) | 6 A (Tc) | — |
| R_DS(on) Max | 600 mΩ @ V_GS = 10 V, I_D = 1.7 A | — |
| Total Gate Charge (Q_g) | 8.5 nC | — |
| Output Capacitance (C_oss) | 8 pF @ 400 V | — |
| Power Dissipation (P_D) | 31 W (Tc) | — |
| Gate Threshold Voltage (V_GS(th)) | 3.5 V (typ) | — |
| Packhaging | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK, 2 leads + tab, SC-63) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Temperature na Operasyon | -55°C to +150°C (Tj) | — |
| Level ng MSL | 1 (per JEDEC J-STD-020) | — |
| Tindminan RoHS | Compliant | Compliant |
| Reel Quantity | 2500 | — |
| Polarity / Channel Type | — | N-Channel Enhancement Mode |
| Drain-Source Voltage (VDS) | — | 600 V |
| Continuous Drain Current (ID) at TC | — | 4.7 A |
| Power Dissipation (PD) at TC | — | 26 W |
| Drain-Source On-Resistance (RDS(on)) | — | 1 Ω @ VGS=10V |
| Gate Threshold Voltage (VGS(th)) | — | ±20 V (max gate-source) |
| Gate Charge (QG) | — | 6 nC @ VGS=10V |
| Output Capacitance (Coss) | — | 230 pF @ 400 V |
| Hanay ng Temperature na Operasyon | — | -55C to +150C (TJ) |
| Gate Drive Voltage (recommended) | — | 10 V (full enhancement) |