IRFZ44NSTRLPBF vs IRLS3034TRLPBF Perbandingan

Perbandingan bersamaan detil IRFZ44NSTRLPBF dari Infineon dan IRLS3034TRLPBF dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum IRFZ44NSTRLPBF IRLS3034TRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Polarity N-Channel —
MOSFET Operating Mode Enhancement —
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at TC 49 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 343 A
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] 2.5 V (typical)
Drain-Source On-Resistance RDS(on) max 17.5 mOhm at VGS=10V —
Total Gate Charge (Qg) 42 nC 108 nC
Power Dissipation (TC) 94 W —
Power Dissipation (TA) 3.8 W —
Rentang Suhu Kerja -55C to +175C -40°C to +175°C (TJ)
Paket D2PAK (TO-263) D2PAK (TO-263), Surface Mount
Tipe Mounting Surface Mount Surface Mount
Technology HEXFET IR HEXFET (planar N-channel)
Status RoHS Compliant Compliant
Lead-Free (PBF suffix) Yes —
FET Type — N-Channel MOSFET, Metal Oxide
Drain-to-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TC=25°C — 195 A
RDS(on) Max at VGS=10V, ID=195A — 1.7 mΩ
Power Dissipation (PD) at TC=25°C — 375 W
Lead-Free — Yes (PBF suffix)
Level MSL — 1 (per JEDEC J-STD-020)
Shipping Format — Tape and Reel, 7-inch (TRL)

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