IRFZ44NSTRLPBF vs IRLS3034TRLPBF Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IRFZ44NSTRLPBF sa pamamagitan ng Infineon at IRLS3034TRLPBF sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Pagsanggunian na paghahambing

Parametro IRFZ44NSTRLPBF IRLS3034TRLPBF
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
Polarity N-Channel —
MOSFET Operating Mode Enhancement —
Drain-Source Voltage (VDS) 55 V —
Continuous Drain Current (ID) at TC 49 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] 343 A
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] 2.5 V (typical)
Drain-Source On-Resistance RDS(on) max 17.5 mOhm at VGS=10V —
Total Gate Charge (Qg) 42 nC 108 nC
Power Dissipation (TC) 94 W —
Power Dissipation (TA) 3.8 W —
Hanay ng Temperature na Operasyon -55C to +175C -40°C to +175°C (TJ)
Packhaging D2PAK (TO-263) D2PAK (TO-263), Surface Mount
Uri ng Pagpapasok Surface Mount Surface Mount
Technology HEXFET IR HEXFET (planar N-channel)
Tindminan RoHS Compliant Compliant
Lead-Free (PBF suffix) Yes —
FET Type — N-Channel MOSFET, Metal Oxide
Drain-to-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TC=25°C — 195 A
RDS(on) Max at VGS=10V, ID=195A — 1.7 mΩ
Power Dissipation (PD) at TC=25°C — 375 W
Lead-Free — Yes (PBF suffix)
Level ng MSL — 1 (per JEDEC J-STD-020)
Shipping Format — Tape and Reel, 7-inch (TRL)

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