MPXV5010DP vs MPX5010DP Vergleich
Detaillierter Direktvergleich von MPXV5010DP von NXP Semiconductors und MPX5010DP von NXP Semiconductors. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Spezifikationsvergleich
| Parameter | MPXV5010DP | MPX5010DP |
|---|---|---|
| Marke | NXP Semiconductors | NXP Semiconductors |
| Kategorie | Pressure Sensors | Pressure Sensors |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $8,10 | $9,60 |
| Pressure Type | Differential | Differential |
| Operating Pressure Range | 0 to 10 kPa (0 to 1.45 PSI) | 0 kPa to 10 kPa (0 to 1.45 PSI) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload] | [DATA_NEEDED: max overload kPa] |
| Ausgangstyp | Analog, Ratiometric | Analog, ratiometric |
| Ausgangsspannungsbereich | 0.2 V to 4.7 V | 0.2 V to 4.7 V |
| Versorgungsspannung | 5 V nominal (4.75 V to 5.25 V) | 4.75 V to 5.25 V (5 V typical) |
| Accuracy | 5 % (over 0 C to 85 C) | — |
| Response Time | 1 ms typical | — |
| Betriebstemperatur | -40 C to +125 C | 0 C to +85 C (compensated) |
| Compensated Temperature | 0 C to 85 C | — |
| Port Style | Male, 0.13 in (3.3 mm) tube, Dual, Same Side | — |
| Gehäuse | 8-BSOP (0.475 in / 12.06 mm width), Dual Ports | 6-SIP Module |
| Montageart | Surface Mount | Through-hole (SIP) |
| Technology | Piezoresistive, MEMS, On-chip Signal Conditioned | Piezoresistive, monolithic silicon, on-chip signal conditioned |
| RoHS-Status | Compliant | Compliant |
| Sensitivity | — | 450 mV/kPa (typical) |
| Versorgungsstrom | — | [DATA_NEEDED: supply current mA] |
| Linearity | — | ±1.5% VFSS (typical, 0-85 C) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature C] |
| Port Configuration | — | Dual axial ports, 4.93 mm (0.19 in) tube |