MPXV5010DP vs MPX5010DP Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci MPXV5010DP disebabkan oleh NXP Semiconductors dan MPX5010DP disebabkan oleh NXP Semiconductors. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | MPXV5010DP | MPX5010DP |
|---|---|---|
| Merek | NXP Semiconductors | NXP Semiconductors |
| Kategori | Pressure Sensors | Pressure Sensors |
| Status Lingkungan Hidup | Aktif | Aktif |
| Pressure Type | Differential | Differential |
| Operating Pressure Range | 0 to 10 kPa (0 to 1.45 PSI) | 0 kPa to 10 kPa (0 to 1.45 PSI) |
| Maximum Overload Pressure | [DATA_NEEDED: maximum overload] | [DATA_NEEDED: max overload kPa] |
| Jenis Output | Analog, Ratiometric | Analog, ratiometric |
| Gambaran Tegangan Output | 0.2 V to 4.7 V | 0.2 V to 4.7 V |
| Tegangan Pemberi Arus | 5 V nominal (4.75 V to 5.25 V) | 4.75 V to 5.25 V (5 V typical) |
| Accuracy | 5 % (over 0 C to 85 C) | — |
| Response Time | 1 ms typical | — |
| Suhu Operasi | -40 C to +125 C | 0 C to +85 C (compensated) |
| Compensated Temperature | 0 C to 85 C | — |
| Port Style | Male, 0.13 in (3.3 mm) tube, Dual, Same Side | — |
| Kemasan | 8-BSOP (0.475 in / 12.06 mm width), Dual Ports | 6-SIP Module |
| Jenis Pemasangan | Surface Mount | Through-hole (SIP) |
| Technology | Piezoresistive, MEMS, On-chip Signal Conditioned | Piezoresistive, monolithic silicon, on-chip signal conditioned |
| Status RoHS | Compliant | Compliant |
| Sensitivity | — | 450 mV/kPa (typical) |
| Arus Pemberi Arus | — | [DATA_NEEDED: supply current mA] |
| Linearity | — | ±1.5% VFSS (typical, 0-85 C) |
| Storage Temperature | — | [DATA_NEEDED: storage temperature C] |
| Port Configuration | — | Dual axial ports, 4.93 mm (0.19 in) tube |