MPXV5010DP vs MPX5010DP 비교

다음의 상세 나란히 비교: MPXV5010DP 제조: NXP Semiconductors 및 MPX5010DP 제조: NXP Semiconductors. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

NXP Semiconductors
MPXV5010DP MPXV5010DP - 10kPa Differential Pressure Sensor | NXP

MPXV5010DP - 10kPa Differential Pressure Sensor | NXP

MPXV5010DP ✓ 활성
NXP Semiconductors
MPX5010DP MPX5010DP - 10kPa Differential Pressure Sensor, 5V | NXP/ST

MPX5010DP - 10kPa Differential Pressure Sensor, 5V | NXP/ST

MPX5010DP ✓ 활성

사양 비교

파라미터 MPXV5010DP MPX5010DP
브랜드 NXP Semiconductors NXP Semiconductors
카테고리 Pressure Sensors Pressure Sensors
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $8.10 $9.60
Pressure Type Differential Differential
Operating Pressure Range 0 to 10 kPa (0 to 1.45 PSI) 0 kPa to 10 kPa (0 to 1.45 PSI)
Maximum Overload Pressure [DATA_NEEDED: maximum overload] [DATA_NEEDED: max overload kPa]
출력 유형 Analog, Ratiometric Analog, ratiometric
출력 전압 범위 0.2 V to 4.7 V 0.2 V to 4.7 V
공급 전압 5 V nominal (4.75 V to 5.25 V) 4.75 V to 5.25 V (5 V typical)
Accuracy 5 % (over 0 C to 85 C) —
Response Time 1 ms typical —
동작 온도 -40 C to +125 C 0 C to +85 C (compensated)
Compensated Temperature 0 C to 85 C —
Port Style Male, 0.13 in (3.3 mm) tube, Dual, Same Side —
패키지 8-BSOP (0.475 in / 12.06 mm width), Dual Ports 6-SIP Module
실장 유형 Surface Mount Through-hole (SIP)
Technology Piezoresistive, MEMS, On-chip Signal Conditioned Piezoresistive, monolithic silicon, on-chip signal conditioned
RoHS 상태 Compliant Compliant
Sensitivity — 450 mV/kPa (typical)
공급 전류 — [DATA_NEEDED: supply current mA]
Linearity — ±1.5% VFSS (typical, 0-85 C)
Storage Temperature — [DATA_NEEDED: storage temperature C]
Port Configuration — Dual axial ports, 4.93 mm (0.19 in) tube

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