MPXV5010DP vs MPX5010DP 比較

詳細並排比較 MPXV5010DP 由 NXP Semiconductors 與 MPX5010DP 由 NXP Semiconductors. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

NXP Semiconductors
MPXV5010DP MPXV5010DP - 10kPa Differential Pressure Sensor | NXP

MPXV5010DP - 10kPa Differential Pressure Sensor | NXP

MPXV5010DP ✓ 啟用中
NXP Semiconductors
MPX5010DP MPX5010DP - 10kPa Differential Pressure Sensor, 5V | NXP/ST

MPX5010DP - 10kPa Differential Pressure Sensor, 5V | NXP/ST

MPX5010DP ✓ 啟用中

規格比較

參數 MPXV5010DP MPX5010DP
品牌 NXP Semiconductors NXP Semiconductors
類別 Pressure Sensors Pressure Sensors
生命週期狀態 啟用中 啟用中
Pressure Type Differential Differential
Operating Pressure Range 0 to 10 kPa (0 to 1.45 PSI) 0 kPa to 10 kPa (0 to 1.45 PSI)
Maximum Overload Pressure [DATA_NEEDED: maximum overload] [DATA_NEEDED: max overload kPa]
輸出類型 Analog, Ratiometric Analog, ratiometric
輸出電壓範圍 0.2 V to 4.7 V 0.2 V to 4.7 V
供應電壓 5 V nominal (4.75 V to 5.25 V) 4.75 V to 5.25 V (5 V typical)
Accuracy 5 % (over 0 C to 85 C) —
Response Time 1 ms typical —
工作溫度 -40 C to +125 C 0 C to +85 C (compensated)
Compensated Temperature 0 C to 85 C —
Port Style Male, 0.13 in (3.3 mm) tube, Dual, Same Side —
封裝 8-BSOP (0.475 in / 12.06 mm width), Dual Ports 6-SIP Module
安裝類型 Surface Mount Through-hole (SIP)
Technology Piezoresistive, MEMS, On-chip Signal Conditioned Piezoresistive, monolithic silicon, on-chip signal conditioned
RoHS 狀態 Compliant Compliant
Sensitivity — 450 mV/kPa (typical)
供應電流 — [DATA_NEEDED: supply current mA]
Linearity — ±1.5% VFSS (typical, 0-85 C)
Storage Temperature — [DATA_NEEDED: storage temperature C]
Port Configuration — Dual axial ports, 4.93 mm (0.19 in) tube

資料表與資源

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