BSZ0994NSATMA1 - 30V 13A N-Channel OptiMOS 5 MOSFET | Infineon
Teilenummer: BSZ0994NSATMA1 ✓ Aktiv| Menge | Stückpreis | Gesamt |
|---|---|---|
| 1 | $0.95 | $0,95 |
| 10 | $0.78 | $7,80 |
| 100 | $0.62 | $62,00 |
| 500 | $0.48 | $240,00 |
| 1.000 | $0.39 | $390,00 |
| 5.000 | $0.31 | $1.550,00 |
BSZ0994NSATMA1 Übersicht
A power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used in power-conversion circuits. Within the broader hierarchy, MOSFETs belong to discrete semiconductors -> transistors -> field-effect transistors -> power MOSFETs, and are the workhorse switching element inside synchronous buck converters, load switches, hot-swap circuits, and motor-drive half-bridges. OptiMOS 5 represents Infineon's fifth-generation trench MOSFET process, optimized for low on-state resistance, low gate charge, and low figure-of-merit (FOM) to minimize conduction and switching losses.
The BSZ0994NSATMA1 features a very low typical on-resistance (in the single-digit milliohm range per the OptiMOS 5 30V family datasheet) and a low gate charge, achieving best-in-class FOM for synchronous rectification in point-of-load converters. The device is housed in a source-down (PG-TSDSON-8-25) package, which keeps the source potential on the exposed pad for direct PCB heatsinking, reducing RthJA and simplifying thermal layout. Its 30V VDS rating provides ample headroom for 12V bus rails with transient tolerance up to automotive load-dump conditions.
Typical applications include synchronous buck converters in computing and telecom, DC-DC point-of-load modules, OR-ing and hot-swap controllers, battery management protection circuits, and high-frequency motor-drive switches. The 30V class also suits 19V laptop adapters and USB-PD source designs. When designing with this part, ensure the gate driver can deliver sufficient peak current to charge the gate charge within the target switching period, and follow the recommended PG-TSDSON-8-25 land pattern with thermal vias beneath the exposed pad to minimize junction-to-ambient thermal resistance.
This page synthesizes distributor pricing, drop-in OptiMOS 5 alternatives, and practical PCB layout guidance not found in the manufacturer datasheet alone.
Drop-in-Alternativen für BSZ0994NSATMA1 – gleiches Gehäuse, Pin-kompatibel. Bauteile mit anderem Gehäuse, die eine PCB-Überarbeitung erfordern, sind ausgeschlossen.
Varianten dieser Serie
Modelle derselben Serie, die drop-in-kompatibel sind mit BSZ0994NSATMA1 (gleiche Bauform und Footprint) – abweichend in Package, Technology, Operating Temperature Range, Drain-Source Voltage (VDS), MSL Level.
Schnellvergleichstool – Wählen Sie Alternativbauteile für den Direktvergleich:
BSZ0901NSIATMA1
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$0.34 / Stück
Datenblatt ansehen →BSZ0501NSIATMA1
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$0.29 / Stück
Datenblatt ansehen →BSC019N04LSGATMA1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
BSC014NE2LSIATMA1
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$0.48 / Stück
Datenblatt ansehen →BSC012N04LSIATMA1
✅ Drop-In ⚠️ Spezifikationen ungeprüft📋 Referenzalternative (nicht im Katalog)
BSC050N04LSGATMA1
✅ Drop-In ⚠️ Spezifikationen ungeprüft✓ Auf Lager
$0.41 / Stück
Datenblatt ansehen →BSZ0994NSATMA1 Grenzwerte & elektrische Eigenschaften
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 30V |
| Transistortyp | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID, Ta) | 13 A |
| Power Dissipation (PD, Ta) | 2.1 W |
| Technology | Trench (OptiMOS 5) |
| Gehäuse | PG-TSDSON-8-25 (5x6 mm) |
| Montageart | Surface Mount |
| Anzahl der Pins | 8 |
| Betriebstemperaturbereich | -55C to +150C (junction) |
| RoHS-Status | Compliant |
| MSL-Level | 1 (per JEDEC J-STD-020) |
| Packaging | Tape & Reel |
BSZ0994NSATMA1 Pin-Konfiguration
| Pin 1 | Source — Source (pin 1, internally tied to exposed pad) |
| Pin 2 | Source — Source (pin 2) |
| Pin 3 | Source — Source (pin 3) |
| Pin 4 | Gate — Gate drive input |
| Pin 5 | Drain — Drain (pin 5) |
| Pin 6 | Source — Source (pin 6) |
| Pin 7 | Source — Source (pin 7) |
| Pin 8 | Source — Source (pin 8) |
| Pin 9 | EP (Source) — Exposed thermal pad - internally tied to Source; PCB heatsink |
Sicherer Arbeitsbereich (BSZ0994NS, VGS=10V, TA=25C)
Typische Anwendungen
BSZ0994NSATMA1 ist geeignet für 6 Anwendungs: Synchronous Buck Converter (Point-of-Load), USB-PD Source / 19V Laptop Adapter, Hot-Swap / OR-ing Controller Switch, Battery Management Protection (BMS), Motor Drive Half-Bridge, LED Lighting Driver Switch.
Synchronous Buck Converter (Point-of-Load)
The BSZ0994NSATMA1 is well suited as the low-side synchronous-rectifier MOSFET in 12V-input buck converters powering CPUs, FPGAs, and ASICs. Its OptiMOS 5 30V trench process delivers a low FOM (RDS(on) x Qg) that minimizes both conduction loss during the on-state and switching loss at the high di/dt transitions of multi-MHz operation. The PG-TSDSON-8-25 source-down package keeps the source pad on the PCB for direct heatsinking, while the 30V VDS rating gives ample margin above the 12V rail plus spike ringing. Compared to a 40V/60V part, the 30V rating cuts Rdson by ~30% at the same die size, which directly improves light-load efficiency.
Empfohlen
USB-PD Source / 19V Laptop Adapter
The BSZ0994NSATMA1 is used as the high-side and low-side switch in 19V USB-PD adapters and laptop charger power stages. Its 30V VDS comfortably exceeds the 19V nominal plus transient overshoot, while the 13A continuous rating supports 60-100W adapter designs. The OptiMOS 5 30V family is specifically optimized for adapter power density, and the 5x6 mm PG-TSDSON-8-25 outline enables slim-form-factor designs. The low Qg reduces the gate-driver's dead-time and crossover loss, which is critical for meeting DOE Level VI and CoC Tier-2 efficiency targets.
Empfohlen
Hot-Swap / OR-ing Controller Switch
In telecom and server -48V-to-load hot-swap paths, the BSZ0994NSATMA1 can serve as the inrush-control or OR-ing MOSFET when the bus is stepped down to 12V. Its 13A rating handles server load transients, and the 30V VDS is sufficient for 12V distribution with surge margin. The PG-TSDSON-8-25 package's exposed pad provides sustained thermal dissipation during prolonged load faults, and the low RDS(on) limits voltage drop to keep efficiency high in always-on data-center power paths. Pairing it with a hot-swap controller such as the BTS51202EKAXUMA1 enables programmable inrush and fault isolation.
Empfohlen
Battery Management Protection (BMS)
Inside 2S-3S lithium-ion battery packs, the BSZ0994NSATMA1 functions as the low-side protection MOSFET on the charge/discharge path. Its 30V VDS covers the fully-charged 3S stack (12.6V) plus inductive spike margin, while the 13A continuous rating supports e-bike and power-tool pack currents. The OptiMOS 5 process yields a low RDS(on) that minimizes heat during high-current discharge, extending pack runtime and reducing thermal stress. The compact PG-TSDSON-8-25 footprint fits inside space-constrained 18650/21700 cell holders while leaving copper area for heat spreading.
Empfohlen
Motor Drive Half-Bridge
The BSZ0994NSATMA1 can be used in 12-24V brushless-DC (BLDC) motor half-bridges for small drones, fans, and e-bike hub drives. Its 30V VDS tolerates the back-EMF spike of a 19V BLDC system, and the 13A continuous ID handles phase currents up to ~10A continuous after thermal derating. The OptiMOS 5 30V family offers fast switching suitable for 25-50 kHz PWM frequencies, and the PG-TSDSON-8-25's exposed pad enables direct PCB heatsinking on the motor-control board. Pair with a 3-phase gate driver such as the 2ED21064S06JXUMA1 to drive both high-side and low-side FETs.
Empfohlen
LED Lighting Driver Switch
In 24V architectural and automotive-LED lighting drivers, the BSZ0994NSATMA1 acts as the main buck switch on the primary side or the high-side switch on the secondary side. Its 30V VDS handles 24V nominal plus inductive ringing, and the low RDS(on) keeps the conduction loss budget tight for the small-form-factor MR16/GU10 bulb housings. The 5x6 mm PG-TSDSON-8-25 outline allows a compact PCB design, and OptiMOS 5's low Qg enables high-frequency switching that shrinks the inductor and capacitor size. Combined with a constant-current LED driver such as the ILD8150EXUMA1, the BSZ0994NSATMA1 supports flicker-free dimming and high-efficacy driver designs.
Empfohlen
Zusammenfassung der empfohlenen Produkte
Technische Referenzdaten für BSZ0994NSATMA1 – Vergleich, Designhinweise und Compliance-Informationen.
Auswahlhilfe
Vergleich mit Alternativen
| Parameter | Dieses Produkt | BSZ0901NSIATMA1 | BSZ0501NSIATMA1 | BSC019N04LSGATMA1 |
|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-TSDSON-8-25 (5x6 mm) | PG-TSDSON-8-25 (5x6 mm) - same | PG-TSDSON-8-25 (5x6 mm) - same | PG-TSDSON-8-25 (5x6 mm) - same |
| Drain-Source Voltage (VDS) | 30 V | 30 V - same | 30 V - same | 40 V |
| Technology | OptiMOS 5 30V (Trench) | OptiMOS 5 30V (Trench) - same family | OptiMOS 5 30V (Trench) - same family | OptiMOS 40V |
| RDS(on) Optimization | Balanced RDS(on) / Qg (low FOM) | Lower RDS(on), higher Qg | Lowest RDS(on) in 30V family | Optimized for 40V conduction |
| Mounting Type | Surface Mount | Surface Mount - same | Surface Mount - same | Surface Mount - same |
Wichtigste Unterscheidungsmerkmale
- OptiMOS 5 30V trench process - low FOM (vs. BSZ0901NSIATMA1)
- True 30V rating optimized for 12V/19V rails (vs. BSC019N04LSGATMA1 (40V))
- Source-down PG-TSDSON-8-25 for simplified PCB thermal layout (vs. BSC050N04LSGATMA1 (40V, same family))
Designhinweise
The PG-TSDSON-8-25 source-down package is designed to dissipate heat through the exposed bottom pad directly into the PCB copper. To achieve the rated 2.1W at TA=25C, the PCB must have a continuous copper pour of at least 1 square inch on the source (top and bottom layers connected via thermal vias). Estimated: with the standard 2-layer 1-oz copper test board (RthJA ~50 C/W), the junction-to-ambient thermal resistance limits continuous dissipation to ~2W before Tj approaches 150C. For higher dissipation, use a 4-layer board with 2-oz inner copper to reduce RthJA to ~25 C/W.
Follow Infineon's recommended PG-TSDSON-8-25 land pattern exactly, including the thermal via array (typically 9-12 vias, 0.3 mm diameter, on a 0.5-0.8 mm pitch) directly under the exposed pad. Place the gate-drive trace as a 0.2-0.3 mm microstrip routed away from the drain node to minimize dv/dt coupling. Keep the gate-loop area under 5 mm^2 to avoid gate-oscillation. The source-down configuration lets you tie the source thermal copper directly to the system ground plane, which also serves as the power return.
Estimated: never exceed VGS=+/-20V gate-source voltage - OptiMOS 5 has a thin gate oxide optimized for low Qg and is more sensitive to gate overstress than older OptiMOS 3 parts. If the gate driver can swing beyond 20V during transient ringing, add a 10V Zener clamp (e.g., BZX84C10) between gate and source. Also, do not operate the device in linear mode (partial turn-on) for extended periods - the OptiMOS 5 process concentrates current in a small channel region and can fail quickly under high VDS * ID stress.
Compliance-Informationen
RoHS and REACH compliant per Infineon product page. Not AEC-Q100 qualified - this is a commercial/industrial grade part. For automotive applications requiring AEC-Q100, contact Infineon for the automotive-grade OptiMOS 5 30V equivalents.
